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Hydroalumination and hydrogallation reactions with tri(ethynyl)silanes - Generation of compounds with up to three coordinatively unsaturated aluminium atoms

机译:三(乙炔基)硅烷的加氢铝化和加氢镓化反应-生成最多三个配位不饱和铝原子的化合物

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Hydroalumination or hydrogallation of tri(ethynyl)silanes, RSi(C≡C-Ar)_3 (1a, R = Ph, Ar = Ph; 1b, R = Me, Ar = Ph; 1c, R = Me, Ar = C_6H_4Me), with the element hydrides H-EtBu 2 (E = Al, Ga) in stoichiometric ratios of 1:1 to 1:3 at ambient temperature yielded the addition products (PhC≡C)_2(R) Si[(tBu_2E)C=C(H)Ph] (2, R = Ph, E = Ga; 3a, R = Me, E = Al; 3b, R = Me, E = Ga), (PhC≡C)(Me)Si[(tBu_2E)C=C(H)Ph]_2 (4a, E = Al, 4b, E = Ga) and (Me)Si[(tBu_2Al)C=C(H)Ar]_3 (5, Ar = Ph; 6, Ar = C_6H_4Me). Compounds 2-4 show a relatively close interaction between the coordinatively unsaturated aluminium or gallium atoms and one of the C~α(≡C) atoms of unreacted alkyne substituents [245 (E = Al) and 266 pm (E = Ga)] that stabilises the kinetically favoured cis addition products with E and hydrogen on the same side of the resulting C=C double bonds. In the absence of these stabilising effects the compounds were found to isomerise to the thermodynamically favoured trans isomers.
机译:三(乙炔基)硅烷RSi(C≡C-Ar)_3(1a,R = Ph,Ar = Ph; 1b,R = Me,Ar = Ph; 1c,R = Me,Ar = C_6H_4Me)的加氢铝化或加氢镓化,在环境温度下,化学计量比为1:1至1:3的元素氢化物H-EtBu 2(E = Al,Ga)产生加成产物(PhC≡C)_2(R)Si [(tBu_2E)C = C(H)Ph](2,R = Ph,E = Ga; 3a,R = Me,E = Al; 3b,R = Me,E = Ga),(PhC≡C)(Me)Si [(tBu_2E )C = C(H)Ph] _2(4a,E = Al,4b,E = Ga)和(Me)Si [(tBu_2Al)C = C(H)Ar] _3(5,Ar = Ph; 6, Ar = C_6H_4Me)。化合物2-4在配位不饱和的铝或镓原子与未反应的炔烃取代基的C〜α(≡C)原子之一[245(E = Al)和266 pm(E = Ga)]之间具有相对紧密的相互作用,在所得C = C双键的同一侧用E和氢稳定动力学上有利的顺式加成产物。在没有这些稳定作用的情况下,发现该化合物异构化为热力学上有利的反式异构体。

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