首页> 外文期刊>Zeitschrift fur Physik, B. Condensed Matter >Isotope effects on the electronic critical points of germanium: Ellipsometric investigation of the E_1 and E_1 + Δ_1 transitions
【24h】

Isotope effects on the electronic critical points of germanium: Ellipsometric investigation of the E_1 and E_1 + Δ_1 transitions

机译:同位素对锗电子临界点的影响:E_1和E_1 +Δ_1跃迁的椭偏研究

获取原文
获取原文并翻译 | 示例
           

摘要

Within the past years the optical excitations of electrons have been measured for semiconductor samples of different isotope compositions. The isotope shift observed have been compared with calculations of the effects of electron-phonon interaction on the electronic band structure. While qualitative agreement has been obtained, some discrepancies remain especially concerning the E_1 and E_1 + Δ_1 transitions. We have remeasured the effect of isotope mass on the E_1 and E_1 + Δ_1 transitions of germanium with several isotopic compositions. The results, obtained by means of spectroscopic ellipsometry, confirm that the real part of the gap self-energies induced by electron-phonon interaction is larger than found from band structure calculations, while the imaginary part agrees with those calculations, which are based on a pseudopotential band structure and a bond charge model for the lattice dynamics. Our results agree with predictions based on the measured temperature dependence of the gaps. We compare our data for E_1 and E_1 + Δ_1 with results for the lowest direct (E_0) and indirect (E_g) gaps. The measured values of Δ_0 and Δ_1 increase noticeably with increasing isotope mass. Similar effects have been observed in the temperature dependence of Δ_1 in α-Sn and GaSb. A microscopic explanation for this effect is not available.
机译:在过去的几年中,已经针对不同同位素组成的半导体样品测量了电子的光激发。已观察到的同位素位移已与电子-声子相互作用对电子能带结构的影响的计算进行了比较。虽然已获得定性一致性,但仍存在一些差异,尤其是关于E_1和E_1 +Δ_1过渡的差异。我们用几种同位素组成重新测量了同位素质量对锗的E_1和E_1 +Δ_1跃迁的影响。通过椭圆偏振光谱法获得的结果证实,由电子-声子相互作用引起的间隙自能的实部大于从能带结构计算中发现的,而虚部与这些计算相符,这是基于拟势带结构和晶格动力学的键电荷模型。我们的结果与基于测得的间隙温度依赖性的预测相符。我们将E_1和E_1 +Δ_1的数据与最低(E_0)和间接(E_g)差距的结果进行比较。 Δ_0和Δ_1的测量值随着同位素质量的增加而显着增加。在α-Sn和GaSb中的Δ_1的温度依赖性中也观察到了类似的效果。没有对此效果的微观解释。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号