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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells
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RF magnetron sputtered indium tin oxide films with high transmittance and work function for a-Si:H/c-Si heterojunction solar cells

机译：用于a-Si：H / c-Si异质结太阳能电池的具有高透射率和功函的RF磁控溅射铟锡氧化物薄膜

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摘要

The RF magnetron sputtered indium tin oxide (ITO) films were deposited on glass substrates with low resistivity, high transmittance and work function for various oxygen (O_2) flow rates. The addition of small O_2 contents during the sputtering process increased the Hall mobility of ITO films while carrier concentration was decreased. The work function of ITO films was enhanced from 4.31 to 4.81 eV through the growth of (222) plane having relatively low surface energy. The highly transparent ITO films were employed as front anti-reflection layer in heterojunction with intrinsic thin layer (HIT) solar cells and the best photo-voltage parameters were found to be; V_(oc)=665 mV, J_(sc)=35.1 mA/cm~2, FF=73.2% and η=17.1% for the O_2 flow rate of 0.1 sccm. The high work function ITO films play an important role for barrier height modification in HIT solar cell.
机译：射频磁控溅射铟锡氧化物（ITO）膜以低电阻率，高透射率和功函数对各种氧气（O_2）流量沉积在玻璃基板上。在溅射过程中添加少量O_2会增加ITO膜的霍尔迁移率，同时降低载流子浓度。通过生长具有较低表面能的（222）平面，ITO膜的功函从4.31 eV提高到4.81 eV。高度透明的ITO膜被用作与本征薄层（HIT）太阳能电池异质结中的前减反射层，并且发现最佳的光电压参数是：对于0.1sccm的O 2流量，V_（oc）＝ 665mV，J_（sc）＝ 35.1mA / cm〜2，FF ＝ 73.2％，η＝ 17.1％。高功函数的ITO膜对于HIT太阳能电池的势垒高度修改起着重要作用。

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