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首页> 外文期刊>Diamond and Related Materials >Quantification of ion bombardment effects in c-BN thin films deposited by rf magnetron sputtering
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Quantification of ion bombardment effects in c-BN thin films deposited by rf magnetron sputtering

机译：射频磁控溅射沉积c-BN薄膜中离子轰击效应的量化

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摘要

It is well established that ion bombardment plays a key role in the deposition of boron nitride thin films with high content of the cubic phase. In order to quantify this effect, boron nitride films were deposited by rf magnetron sputtering under a wide range of ion bombardment conditions. The substrate bias was controlled by the method of 'substrate tuning', and varied between 0 and 100 V. A tuned Langmuir probe working in anti-resonant condition was used to measure the plasma density, the plasma potential, and the electron temperature in the region adjacent to the substrate. These measurements were made at different radial positions which allowed a precise local calculation of the momentum per atom transferred to the growing film. A sharp threshold of about 700 (eV amu)~(1/2) was found for the deposition of c-BN films, and a maximum cubic content near to 90 percent occurs at 1000-1200 (eV amu)~(1/2). A sharp decrease of the dependence of the film growth rate with the cubic content is observed from which a value of about 1600 (eV amu)~(1/2) is deduced as the momentum per atom threshold for the presence of significant re-sputtering effects in c-RN films.
机译：众所周知，离子轰击在立方相含量高的氮化硼薄膜的沉积中起着关键作用。为了量化该效果，通过射频磁控溅射在各种离子轰击条件下沉积氮化硼膜。基板偏置通过“基板调谐”方法控制，并且在0至100 V之间变化。使用在反谐振条件下工作的调谐Langmuir探针测量等离子体密度，等离子体电势和电子温度。与衬底相邻的区域。这些测量是在不同的径向位置进行的，从而可以对转移到生长膜的每个原子的动量进行精确的局部计算。发现沉积c-BN膜的临界阈值约为700（eV amu）〜（1/2），在1000-1200（eV amu）〜（1/2）处最大立方含量接近90％ ）。观察到薄膜生长速率对立方晶含量的依赖性急剧降低，由此推导出约1600（eV amu）〜（1/2）的值作为存在显着再溅射的每原子动量阈值c-RN胶片的效果。

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