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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Luminescence characteristics of Er-doped GaN semiconductor thin films
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Luminescence characteristics of Er-doped GaN semiconductor thin films

机译：掺Er的GaN半导体薄膜的发光特性

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Semiconductors doped with rare earth atoms havebeen studied for more than a decade because of the potential ofusing them to develop compact and efficient electroluminescence(EL) devices. Trivalent erbium ions (Er~(3+)) are of specialinterest because they exhibit atomic-like transitions centered at1540 nm, which corresponds to the low-loss window of silica-based optical fibers. While EL devices, based on Er-doped Si andGaAs materials, have been fabricated, their efficiency remains toolow for practical applications. Several years ago an importantobservation was made that there was less detrimental temperaturequenching of Er luminescence intensity for larger bandgap hostmaterials. Therefore, Er-doping of wide gap semiconductors, suchas the III-V nitrides, appears to be a promising approach toovercoming the thermal quenching of Er luminescence found in Siand GaAs. In particular, GaN epilayers doped with Er ions haveshown a highly reduced thermal quenching of the intensity of theEr luminescence from cryogenic to elevated temperatures. Theremarkable thermal stability of the light emission may be due tothe large energy bandgap of the material, as well as to the opticalinactivity of the material defects in the GaN films. In this paper,recent data concerning the luminescence characteristics of Er-doped GaN thin films are presented. Two different methods havebeen used for Er-doping of the GaN films: ion implantation and insitu doping during epitaxial growth. Both methods have provensuccessful for incorporation and optical activation of Er~(3+) ions.Infrared photoluminescence spectra, centered at 1540 nm, havebeen measured for various Er-doped III-N films. Considerablydifferent emission spectra, with different thermal quenchingcharacteristics, have been observed, depending upon thewavelength of the optical pump and the Er-doping method. Defect-related absorption centers permit excitation of the Er ions usingbelow-bandgap optical sources. Elemental impurities, such as Oand C, in the thin films have also been shown to influence theemission spectra and to lead to different optical characteristics.
机译：掺杂稀土原子的半导体已经被研究了十多年，这是因为它们有潜力用于开发紧凑高效的电致发光器件。三价离子（Er〜（3+））特别引起关注，因为它们表现出以1540 nm为中心的原子样跃迁，这与二氧化硅基光纤的低损耗窗相对应。虽然已经制造了基于掺Er的Si和GaAs材料的EL器件，但是它们的效率仍然是实际应用的工具。几年前，一个重要的观察表明，对于较大的带隙基质材料，Er发光强度的有害温度猝灭较少。因此，宽间隙半导体（例如III-V氮化物）的掺Er似乎是克服在Siand GaAs中发现的Er发光的热猝灭的有前途的方法。特别地，掺杂有Er离子的GaN外延层显示出从低温到高温的Er发光强度的热淬灭大大降低。发光的显着热稳定性可能归因于材料的大能带隙以及GaN膜中材料缺陷的光学惰性。本文介绍了有关掺Er GaN薄膜发光特性的最新数据。 GaN薄膜的Er掺杂已经使用了两种不同的方法：离子注入和外延生长过程中的原位掺杂。两种方法均已证明可成功掺入和光学活化Er〜（3+）离子。已对各种掺Er的III-N薄膜进行了红外光谱测试，其中心波长为1540 nm。已经观察到具有不同的热猝灭特性的相当不同的发射光谱，这取决于光泵浦的波长和Er掺杂方法。与缺陷相关的吸收中心允许使用带隙以下光源激发Er离子。薄膜中的元素杂质（例如Oand C）也已显示出影响发射光谱并导致不同的光学特性。

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