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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Nitrogen enhanced oxygen precipitation in Czochralski silicon wafers coated with silicon nitride films
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Nitrogen enhanced oxygen precipitation in Czochralski silicon wafers coated with silicon nitride films

机译：氮增强了覆盖氮化硅膜的切克劳斯基硅片中的氧沉淀

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摘要

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiN_x) films or not, subjected to two-step anneal of 800°C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250°C for 50 s. It was found that OP in the Cz silicon wafers coated with SiN_x films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiN _x film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.
机译：对于Czochralski（Cz）硅晶片的氧析出（OP）行为进行了研究，该晶片已涂覆或未涂覆氮化硅（SiN_x）膜，然后经过800°C / 4 h + 1000°C / 16 h的两步退火快速热处理（RTP）在1150至1250°C的不同温度下持续50 s。发现在每种情况下涂覆有SiN_x膜的Cz硅晶片中的OP都更强。这是因为在高温RTP期间，氮原子从表面涂覆的SiN_x膜扩散到Cz硅晶片的主体中。此外，已证明RTP灯照射促进了氮原子的扩散，这最可能是由于紫外线增强了硅氮键的断裂。

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