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首页> 外文期刊>Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena >Very Thin Amorphous and Microcrystalline Silicon Films Deposited by Hot-Wire Chemical Vapour Deposition for Photovoltaic Applications
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Very Thin Amorphous and Microcrystalline Silicon Films Deposited by Hot-Wire Chemical Vapour Deposition for Photovoltaic Applications

机译：通过热线化学气相沉积沉积非常薄的非晶和微晶硅薄膜，用于光伏应用

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摘要

For thin-film silicon-based solar cell technology, very thin (5 - 20 nm) doped layers are prerequisite. In stacked cell structures, usually the top cell incorporates a very thin amorphous intrinsic layer (50 - 100 nm). In this paper, various aspects of fabricating these very thin films by Hot-Wire CVD are discussed: (i) the growth of very thin p-doped microcrystalline silicon (p-μc-Si:H) and amorphous silicon-carbon (a-SiC:H) films on different substrates: glass, TCO and amorphous silicon, (ii) the properties and structural stability of these very thin p-doped films in device-like structures, (iii) the thickness dependence of conductivity of n-doped amorphous silicon which shows bulk-like properties from a thickness of only 20 nm, if the deposition parameters are suitably chosen, (iv) the incorporation of very thin p-μc-Si:H films into p-i-n and n-i-p solar cell device entirely fabricated by Hot-Wire CVD with initial efficiencies up to η_(iniuai) = 7.8% and 6.2%, respectively, (v) the incorporation of very thin (43 nm) intrinsic amorphous layers into stacked cell (p-i-n-p-i-n) structures entirely fabricated by Hot-Wire CVD, where the top i-layer has to necessarily be very dense to withstand the roughening influence of the subsequent n-μc-Si:H deposition, reaching a maximum efficiency of η_(initial) = 7.0%, and (vi) the fabrication of different n/p recombination or tunnel junctions for p-i-n-p-i-n tandem solar cells and their stability.
机译：对于基于薄膜硅的太阳能电池技术，非常薄的掺杂层（5-20​​ nm）是先决条件。在堆叠的电池结构中，通常顶部电池会包含非常薄的非晶本征层（50-100 nm）。在本文中，讨论了通过热线CVD制造这些非常薄的薄膜的各个方面：（i）非常薄的p掺杂微晶硅（p-μc-Si：H）和非晶硅碳（a- SiC：H）在玻璃，TCO和非晶硅等不同衬底上的薄膜;（ii）这些非常薄的p掺杂薄膜在器件状结构中的特性和结构稳定性;（iii）n掺杂的电导率对厚度的依赖性如果适当选择沉积参数，则非晶硅的厚度仅为20 nm，它具有块状特性;（iv）将非常薄的p-μc-Si：H膜掺入针脚和压区太阳能电池器件中，完全由以下方法制造初始效率分别高达η_（iniuai）= 7.8％和6.2％的热线CVD（v）将非常薄的（43 nm）本征非晶层掺入完全由热线制造的堆叠式电池（pinpin）结构中CVD，顶部的i层必须非常密集才能承受粗糙增强后续n-μc-Si：H沉积的影响，达到最大效率η_（initial）= 7.0％，以及（vi）制造用于钉扎串联太阳能电池的不同n / p复合或隧道结。

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