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首页> 外文期刊>Journal of Low Power Electronics >CMOS Leakage and Glitch Minimization for Power-Performance Tradeoff
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CMOS Leakage and Glitch Minimization for Power-Performance Tradeoff

机译:CMOS泄漏和毛刺最小化,以权衡性能

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摘要

A mixed integer linear programming (MILP) technique simultaneously minimizes the leakage and glitch power consumption of a static CMOS circuit for any specified input to output delay. In a dual-threshold design, the number of high-threshold devices is maximized and a minimum number of delay elements are inserted to reduce the differential path delays below the inertial delays of incident gates. The key features of the method are that the constraint set size for the MILP model is linear in the circuit size and power-performance tradeoff is allowed. Experimental results show 96%, 40%, and 70% reductions of leakage power, dynamic power, and total power, respectively, for the benchmark circuit C7552 implemented in the 70 nm BPTM CMOS technology.
机译:对于任何指定的输入到输出延迟,混合整数线性编程(MILP)技术可同时将静态CMOS电路的泄漏和毛刺功耗降至最低。在双阈值设计中,高阈值器件的数量被最大化,并且插入了最小数量的延迟元件,以将差分路径延迟降低到入射门的惯性延迟以下。该方法的关键特征是MILP模型的约束集大小在电路大小上是线性的,并且可以在功率性能之间进行权衡。实验结果表明,采用70 nm BPTM CMOS技术实现的基准电路C7552,泄漏功率,动态功率和总功率分别降低了96%,40%和70%。

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