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首页> 外文期刊>Journal of nanoscience and nanotechnology >Effect of Bias Voltage on Microstructure and Mechanical Properties of Nanocrystalline TiN Films Deposited by Reactive Magnetron Sputtering
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Effect of Bias Voltage on Microstructure and Mechanical Properties of Nanocrystalline TiN Films Deposited by Reactive Magnetron Sputtering

机译：偏压对反应磁控溅射沉积纳米TiN薄膜结构和力学性能的影响

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摘要

Nanocrystalline TiN films deposited under various bias voltages have been prepared by a reactive magnetron sputtering. The effect of bias voltage on the microstructural morphologies of the TiN films was characterized by FE-SEM and AFM. The texture of the TiN films was characterized by XRD. It is also observed that the crystallite size decreases with increasing bias voltages. However, rms roughness increases with increasing bias voltages. The changes in roughness and crystallite size in the TiN thin films are due to one or a combination of factors such as resputtering, ion bombardment, surface diffusivity and adatom mobility; the influence of each factor depends on the processing conditions.
机译：已经通过反应磁控溅射制备了在各种偏压下沉积的纳米晶TiN膜。用FE-SEM和AFM表征了偏压对TiN薄膜微观结构的影响。用XRD对TiN薄膜的织构进行表征。还观察到，微晶尺寸随着偏置电压的增加而减小。但是，均方根粗糙度随偏置电压的增加而增加。 TiN薄膜的粗糙度和微晶尺寸的变化是由于一种或多种因素引起的，例如再溅射，离子轰击，表面扩散率和原子迁移率。每个因素的影响取决于加工条件。

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