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首页> 外文期刊>Materials Science Research International >Effects of Bias Voltage and Discharge Current on Mechanical Properties of TiN Film Deposited by DC Magnetron Sputtering
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Effects of Bias Voltage and Discharge Current on Mechanical Properties of TiN Film Deposited by DC Magnetron Sputtering

机译：偏置电压和放电电流对直流磁控溅射沉积TiN薄膜力学性能的影响

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摘要

The effects of bias voltage and discharge current on the mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering are investigated. The residual stress, hardness, toughness and adhesive strength are examined by X-ray diffraction method, nano-indentation test, indentation fracture method and scratch test, respectively. The films are revealed to exhibit high compressive residual stress that increases with the bias voltage and discharge current. The hardness also increases with the bias voltage and discharge current, whereas the adhesive strength decreases and the toughness increases only with increasing bias voltage. The variation of these properties correlates well with the variation in residual stress, regardless of changes in coating conditions. These properties are considered to depend mainly on the residual stress. The width of the X-ray diffraction peak also increased with bias voltage and discharge current, and correlated well with the change in residual stress. It was confirmed that the residual stress was generated by bombardment with high-energy ions during the coating process, and it was concluded that increasing the bias voltage and discharge current had the same effect to enhance the ion bombardment. Based on these findings, the ion bombardment is considered to be the dominant mechanism governing the mechanical properties of TiN films.
机译：研究了偏压和放电电流对反应性直流磁控溅射沉积在碳钢JIS S45C上的TiN薄膜力学性能的影响。分别通过X射线衍射法，纳米压痕试验，压痕断裂法和划痕试验检查残余应力，硬度，韧性和粘合强度。揭示了这些膜表现出高压缩残余应力，该残余压缩应力随偏置电压和放电电流而增加。硬度也随偏压和放电电流而增加，而粘合强度降低而韧性仅随偏压增加而增加。无论涂层条件如何变化，这些特性的变化都与残余应力的变化密切相关。这些性质被认为主要取决于残余应力。 X射线衍射峰的宽度也随着偏置电压和放电电流而增加，并且与残余应力的变化良好相关。可以肯定的是，在涂覆过程中，残余应力是由高能离子轰击产生的，并且可以得出结论，增加偏置电压和放电电流对增强离子轰击具有相同的作用。基于这些发现，离子轰击被认为是控制TiN薄膜力学性能的主要机制。

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