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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Microscopically in homogeneous electronic and material properties arising during thermal and plasma CVD of graphene
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Microscopically in homogeneous electronic and material properties arising during thermal and plasma CVD of graphene

机译：从微观上讲，石墨烯的热和等离子CVD产生均匀的电子和材料特性

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摘要

Graphene layers were prepared on copper substrates by thermal chemical vapor deposition (CVD) and microwave (MW) plasma CVD processes. Atomic force microscopy in topography, phase imaging, and conductivity detection (C-AFM) as well as Raman micro-spectroscopy are employed to analyze the graphene layers on a microscopic scale in an as-deposited state on copper. By correlating these data we identify microscopic inhomogeneities (on a micrometer and nanometer scale) in material and electrical properties of both types of graphene. The inhomogeneities are attributed to (i) large but defects including flakes of plasma CVD graphene and (ii) high quality but small flakes of thermal CVD graphene. Moreover, the plasma CVD graphene contains large density of non-conductive openings (0.1-1 μm in size) where no graphene is detected. The obtained data explain two orders of magnitude lower electrical conductivity of the plasma CVD graphene measured macroscopically after substrate transfer. Implications for optimizing the graphene growth processes are discussed.
机译：通过热化学气相沉积（CVD）和微波（MW）等离子体CVD工艺在铜基板上制备石墨烯层。利用形貌，相成像和电导率检测（C-AFM）中的原子力显微镜以及拉曼显微光谱技术，以沉积状态在铜上以微观尺度分析石墨烯层。通过关联这些数据，我们可以确定两种石墨烯的材料和电学性质的微观不均匀性（在微米和纳米尺度上）。不均匀性归因于（i）大但缺陷，包括等离子CVD石墨烯的薄片和（ii）高质量但小的热CVD石墨烯的薄片。此外，等离子体CVD石墨烯包含大密度的非导电开口（尺寸为0.1-1μm），其中未检测到石墨烯。所获得的数据解释了在基板转移后宏观测量的等离子CVD石墨烯的电导率降低了两个数量级。讨论了优化石墨烯生长过程的意义。

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