...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Physical and chemical properties of amorphous hydrogenated carbon films deposited by PECVD in a low self-bias range
【24h】

Physical and chemical properties of amorphous hydrogenated carbon films deposited by PECVD in a low self-bias range

机译：在低自偏压范围内通过PECVD沉积的非晶氢化碳膜的物理和化学性质

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Amorphous hydrogenated carbon (a-C:H) films are deposited by plasma enhanced chemical vapor deposition (PECVD) at 13.56 MHz using pure methane gas. Structure, optical properties, stress level, hardness, Young modulus and surface energy are determined using spectroscopic ellipsometry, Rutherford backscattering spectroscopy, elastic recoil detection analysis, infrared experiments, curvature, nanoindentation and contact angle measurements. The present study is focused on the effect of the r.f. substrate bias voltage on the various properties, insisting on the very low bias range. We observe the properties change from polymer-like to graphite-like depending on the energy of the ions impinging on the sample surface. These results are incorporated in the discussion emphasizing on the well-known subimplantation model which describes the promotion of the sp(3) C-C hybridization in an energy range just above the penetration threshold of the film (100-150 V). At higher self-bias, the properties evolution is explained by the relaxation of the material due to the extra energy dissipated by the impinging ions which encourage the carbon atoms to rearrange themselves in a more stable sp(2) -bond structure. Despite of such a different structure, the measured surface energies are similar whatever the self-bias. This behavior is in a good agreement with a theory of a-C:H growth recently proposed.
机译：使用纯甲烷气体通过等离子体增强化学气相沉积（PECVD）在13.56 MHz上沉积非晶态氢化碳（a-C：H）膜。结构，光学性能，应力水平，硬度，杨氏模量和表面能使用光谱椭圆仪，卢瑟福背散射光谱，弹性反冲检测分析，红外实验，曲率，纳米压痕和接触角测量来确定。本研究集中于射频干扰的影响。衬底偏置电压对各种性能的影响，坚持在非常低的偏置范围内。我们观察到其性质从聚合物样变为石墨样，这取决于撞击在样品表面上的离子的能量。将这些结果并入讨论中，着重于众所周知的子植入模型，该模型描述了在刚刚高于薄膜穿透阈值（100-150 V）的能量范围内sp（3）C-C杂交的促进作用。在较高的自偏压下，材料的弛豫解释了性能的演化，这是由于撞击离子耗散了额外的能量，从而促使碳原子以更稳定的sp（2）键结构重排。尽管结构不同，但无论自偏压如何，测量的表面能都是相似的。这种行为与最近提出的a-C：H增长理论非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号