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EXAFS study on poly-Si1-XGeX films prepared by reactive thermal CVD method

机译:反应热CVD法制备的Si1-XGeX薄膜的EXAFS研究

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摘要

Extended X-ray absorption fine structure analyses were carried out on Si1-XGeX films of different thicknesses, prepared by the reactive thermal chemical vapor deposition (CVD) method. From a Rutherford backscattering measurement, the Ge fraction was found to be high near the substrate interface. The Ge coordination ratio, Ge-Ge bond length and Ge-Si bond length decreased with increasing film thickness. The Ge fraction dependences of these parameters were found to be different from the results of previous studies on Si1-XGeX films prepared by molecular beam epitaxy. Our results are considered to be caused by the local structure formation around the Ge atoms during the reactive thermal CVD process. (c) 2006 Elsevier B.V. All rights reserved.
机译:通过反应热化学气相沉积(CVD)方法制备的不同厚度的Si1-XGeX薄膜进行了扩展的X射线吸收精细结构分析。通过卢瑟福背散射测量,发现在衬底界面附近锗含量很高。随着膜厚度的增加,Ge配位比,Ge-Ge键长和Ge-Si键长减小。发现这些参数对Ge分数的依赖性与先前对通过分子束外延制备的Si1-XGeX膜的研究结果不同。我们的结果被认为是由于反应热CVD过程中Ge原子周围的局部结构形成所致。 (c)2006 Elsevier B.V.保留所有权利。

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