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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Formation of optically active osmium silicide in silica using ion implantation and thermal annealing
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Formation of optically active osmium silicide in silica using ion implantation and thermal annealing

机译：使用离子注入和热退火在二氧化硅中形成光学活性硅化icide

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Optically active metal silicides offer an interesting direct band gap material that in principle can be integrated into Si-based microelectronics to provide optoelectronic functionality. In particular the isostructual phases of Os2Si3 and Ru2Si3 and their alloys could be tailored to yield a response ranging from the visible blue to the near infrared. The metal-rich phase, Os2Si3 poses some difficulties for the annealing process since it is the low temperature phase, and thus difficult to fabricate in silica due to the high temperature needed for precipitation. Ion implantation of Os and Si ions above the stoichiometric ratio resulted in the formation of Os2Si3 at 1100 degrees C, as indicated by Rutherford backscattering. Faint visible photoluminescence was detected with a peak centered near (520 nm) corresponding to the previously reported bandgap of 2.3 eV [L. Schellenberg, H.F. Braun, J. Muller, J. Less-Common Met. 144 (1988)]. To the best of our knowledge this is the first reported photoluminescence from this material. (c) 2006 Elsevier B.V. All rights reserved.
机译：光学活性金属硅化物提供了一种有趣的直接带隙材料，该材料原则上可以集成到基于Si的微电子器件中以提供光电功能。特别是，可以对Os2Si3和Ru2Si3及其合金的同质相进行定制，以产生从可见蓝到近红外的响应。富金属相Os2Si3属于低温相，因此在退火过程中会遇到一些困难，由于沉淀所需的高温，因此很难在二氧化硅中制造。如Rutherford反向散射所示，高于化学计量比的离子注入会导致在1100摄氏度下形成Os2Si3。检测到微弱的可见光致发光，其中心位于（520 nm）附近的峰对应于先前报道的2.3 eV的带隙[L。 Schellenberg，H.F。Braun，J.Muller，J.Less-Common Met。 144（1988）]。据我们所知，这是该材料首次报道的光致发光。 （c）2006 Elsevier B.V.保留所有权利。

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