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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Microstructure analysis of a-SiC : H thin films grown by high-growth-rate PECVD
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Microstructure analysis of a-SiC : H thin films grown by high-growth-rate PECVD

机译：高生长速率PECVD生长的a-SiC：H薄膜的微观结构分析

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Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were synthesized by a non-conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) system in which a 350 kHz High Frequency (HF) is coupled to the standard 13.56 MHz Radio Frequency (RF). Varying the methane to silane gas flux rate in a high power regime, a series of a-SiC:H layers were deposited on silicon substrates with a carbon ratio ranging from 0.25 to 0.46. A very high growth rate up to 150 angstrom/s coupled with a very large homogeneity of both thickness and composition (less than 1.5% on 6 in. Si wafers) were achieved. A careful analysis of chemical composition and microstructure of the films was performed combining Infrared and Micro-Raman spectroscopies. (c) 2006 Elsevier B.V. All rights reserved.
机译：通过非常规等离子体增强化学气相沉积（PECVD）系统合成氢化非晶碳化硅（a-SiC：H）薄膜，该系统将350 kHz高频（HF）耦合到标准13.56 MHz射频（RF） ）。在高功率范围内改变甲烷与硅烷的气体通量速率，在碳衬底上以0.25至0.46的碳比沉积一系列的a-SiC：H层。达到了高达150埃/秒的非常高的生长速度，并且在厚度和成分上都具有非常大的同质性（在6英寸的Si晶圆上小于1.5％）。结合红外光谱和显微拉曼光谱对薄膜的化学组成和微观结构进行了仔细分析。 （c）2006 Elsevier B.V.保留所有权利。

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