• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Electron transport and optical characteristics in amorphous indium zinc oxide films
【24h】

Electron transport and optical characteristics in amorphous indium zinc oxide films

机译：非晶铟锌氧化物薄膜中的电子传输和光学特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper discusses the electron transport and the optical characteristics of amorphous indium zinc oxide and the role of the oxygen partial pressure on tailoring its properties. The data show that by varying the oxygen partial pressure during the deposition process from 10(-3) to 2 x 10(-1) Pa, the electrical resistivity varies from about 10(-4) to 2 x 10(1) Omega cm, which corresponds to a variation on the Hall mobility from 60 to 10 cm(2) V-1 s(-1). The conductivity and mobility analysis show that the transport of carriers is not band tail limited, as happens in conventional disordered semiconductors, but highly dependent on the ionicity and the presence of oxygen vacancies, where mobility is mainly limited by carrier scattering. The optical characteristics inferred from the transmittance data reveal films with optical gaps in the range of 3.68-3.76 eV, very close to the ones observed on crystalline/polycrystalline IZO films (3.7-3.9 eV). (c) 2006 Elsevier B.V. All rights reserved.
机译：本文讨论了非晶态铟锌氧化物的电子传输和光学特性，以及氧分压对其特性的影响。数据显示，通过在沉积过程中将氧分压从10（-3）Pa更改为2 x 10（-1）Pa，电阻率从大约10（-4）到2 x 10（1）Ωcm ，这对应于霍尔迁移率从60到10 cm（2）V-1 s（-1）的变化。电导率和迁移率分析表明，载流子的传输不受带尾的限制，就像传统的无序半导体一样，而是高度依赖于离子性和氧空位的存在，其中迁移率主要受载流子散射的限制。从透射率数据推断出的光学特性表明，膜的光学间隙在3.68-3.76 eV的范围内，非常接近在晶体/多晶IZO膜上观察到的光学间隙（3.7-3.9 eV）。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号