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Standard and electrically detected magnetic resonance in nanocrystalline silicon

机译:纳米晶体硅中的标准和电检测磁共振

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摘要

We present results from standard and electrically detected magnetic resonance on nanocrystalline silicon from hot-wire and plasma-enhanced chemical vapour deposition for which the Raman spectra showed the same large crystalline fraction. Based on the fact that dangling bond spin density scales with the sub-band gap absorption coefficient at photon energies < 1.1 eV we suggest the introduction of a calibration factor between the dangling bond spin density and the absorption coefficient. The photocarrier mobility-lifetime product and diffusion length increase with decreasing dangling bond spin density and absorption coefficient. The electrically detected magnetic resonance spectra shows no signal in the dark current and a single line when measured by the spin-dependent photocurrent. The experimentally determined g-value of this line is temperature dependent. The quantum-mechanical spin-pair model explains the electrically detected magnetic resonance signal height. From the spin-pair model we determine microscopic parameters, e.g. singlet-decay rate. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 21]
机译:我们提出了从标准的和电学上检测到的来自热线和等离子体增强化学气相沉积的纳米晶硅上磁共振的结果,其拉曼光谱显示出相同的大晶体分数。基于在光子能量<1.1 eV时悬挂键自旋密度与子带隙吸收系数成比例的事实,我们建议在悬挂键自旋密度和吸收系数之间引入校准因子。随着悬空键的自旋密度和吸收系数的减小,光载流子的寿命终产物和扩散长度增加。当通过自旋相关的光电流测量时,电检测到的磁共振谱在暗电流中没有信号,只有一条线。实验确定的这条线的g值与温度有关。量子力学自旋对模型解释了电检测的磁共振信号高度。根据自旋对模型,我们确定微观参数,例如单重态衰变率。 (C)2000 Elsevier Science B.V.保留所有权利。 [参考:21]

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