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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques
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Conductance fluctuations in undoped intrinsic hydrogenated amorphous silicon films prepared using several deposition techniques

机译：使用几种沉积技术制备的未掺杂本征氢化非晶硅薄膜的电导涨落

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摘要

Coplanar conductance fluctuations in a range of device quality undoped hydrogenated amorphous silicon (a-Si:H) films prepared using different deposition systems were measured in the temperature range of 440-505 It for frequencies from 2 Hz to 3 kHz. The 1/f(x) type noise spectra had two different power law dependencies, one at lower frequencies with slope alpha(1) dose to unity and a second region at higher frequencies with slope alpha(2) around 0.60. The noise power density decreases with increasing temperature in the high frequency region, but only increases much less with temperature at low frequencies. The results indicate that the noise in undoyed intrinsic a-Si:H films is due to two independent noise mechanisms operating simultaneously. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 19]
机译：在440-505 It的温度范围内，对于2 Hz至3 kHz的频率，测量了使用不同沉积系统制备的一系列器件质量的未掺杂氢化非晶硅（a-Si：H）膜中的共面电导波动。 1 / f（x）型噪声频谱具有两个不同的幂律相关性，一个在较低频率下斜率α（1）达到单位统一，而第二个区域在较高频率下斜率α（2）大约为0.60。在高频区域，噪声功率密度随温度升高而降低，而在低频区域，噪声功率密度仅随温度升高而降低得多。结果表明，未掺杂的本征a-Si：H薄膜中的噪声是由于两个同时运行的独立噪声机制引起的。 （C）2000 Elsevier Science B.V.保留所有权利。 [参考：19]

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