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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Proton-induced photoconductivity increment and the thermal stability of a-Si:H thin film
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Proton-induced photoconductivity increment and the thermal stability of a-Si:H thin film

机译：质子诱导的a-Si：H薄膜的光电导性增加和热稳定性

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Photoconductivity (PC) variations of device-grade a-Si:H thin films due to proton irradiation are investigated in this paper. We performed in-situ measurements of the PC variations induced by 0.10, 1.0 and 10 MeV proton irradiations. The irradiation initially caused an increase in PC in all sample. However, continued irradiation resulted in a dramatic decrease as the irradiation fluence increased. The results obtained in this study suggest that the PC increment is caused not by accumulation of displacement damage. We also found that the dark conductivity (DC) was drastically increased in the same manner as the PC increment, whereas the photosensitivity had a minimum value at the peak of the PC increment. The results of the temperature dependence of PC for a-Si:H before and after 10 MeV proton irradiation showed that such a proton-induced PC increment consisted of two components: one thermally stable and one metastable. The thermally metastable component disappeared in the temperature region of 300 to 340 K. On the contrary, radiation-induced defects were annealed above 340 K.
机译：本文研究了质子辐照引起的器件级a-Si：H薄膜的光电导（PC）变化。我们对由0.10、1.0和10 MeV质子辐照引起的PC变化进行了原位测量。辐射最初导致所有样品中PC的增加。但是，随着辐照通量的增加，连续辐照导致显着下降。在这项研究中获得的结果表明PC增量不是由位移损伤的累积引起的。我们还发现暗电导率（DC）以与PC增量相同的方式急剧增加，而光敏性在PC增量的峰值处具有最小值。 10 MeV质子辐照前后PC对a-Si：H的温度依赖性结果表明，这种质子诱导的PC增量包括两个成分：一个是热稳定的，一个是亚稳的。在300至340 K的温度范围内，热亚稳态成分消失了。相反，在340 K以上的温度下，对辐射引起的缺陷进行了退火。

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