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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Dependence of the doping efficiency on material composition in n-type a-SiOx : H
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Dependence of the doping efficiency on material composition in n-type a-SiOx : H

机译：掺杂效率对n型a-SiOx：H中材料组成的影响

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摘要

Amorphous hydrogenated silicon suboxides (a-SiOx:H) deposited by plasma enhanced chemical vapour deposition (PECVD) have a band gap which can be tuned from 1.9 to 3.0 eV by varying the oxygen content from 0 to 50 at.,,. n- and p-type doping is realised by adding PH3 and B2H6, respectively. to the source gases SiH4, H-2 and CO2. Alloying with increasing amounts of oxygen reduces the mean co-ordination number from a value close to 4 (a-Si:H) to approximately 2.7, which gradually approaches the ideal value of = 2.4 for network glasses. Thus the incorporation of dopant atoms into electrically active, fourfold co-ordinated sites becomes more unlikely with increasing [0]. As a consequence the conductivity, defect density and doping efficiency in phosphorus doped n-type SiOx undergo drastic changes and show increasingly intrinsic character for higher oxygen concentrations. The dependence of the doping efficiency on average co-ordination is examined in a quantitative manner. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]
机译：通过等离子增强化学气相沉积（PECVD）沉积的非晶态氢化硅氧化物（a-SiOx：H）的带隙可通过将氧含量从0改变为50 at。来从1.9 eV调整到3.0 eV。通过分别添加PH3和B2H6来实现n型和p型掺杂。到原料气体SiH4，H-2和CO2。随着氧气含量的增加合金化将平均配位数从接近4（a-Si：H）的值降低到大约2.7，逐渐接近网络眼镜的理想值 = 2.4。因此，随着[0]的增加，掺入原子的电活性四重配位位点变得不太可能。结果，磷掺杂的n型SiOx中的电导率，缺陷密度和掺杂效率发生剧烈变化，并且对于更高的氧浓度显示出越来越大的固有特性。以定量方式检查掺杂效率对平均配位的依赖性。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：13]

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