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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Wide optical-gap a-SiO:H films prepared by rf glow discharge
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Wide optical-gap a-SiO:H films prepared by rf glow discharge

机译：射频辉光放电制备的宽光学间隙a-SiO：H薄膜

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摘要

Hydrogenated amorphous silicon oxygen alloy (a-SiO:H) films have been prepared at a temperature of 200 degrees C by arf plasma deposition process. A controlled widening in the optical gap (E(g)). has been obtained by diluting SiH4 with CO2 in the rf plasma. The refractive index (n) decreases, dark conductivity (sigma(d)) as well as photoconductivity (sigma(ph)) decreases, the Si-dangling bond density (N-s) increases, and the widening of the optical gap is caused by O-incorporation in the a-Si:H network. However, up to an optimum level of O-incorporation sigma(ph) decreases by a factor of 5 only, photosensitivity (sigma(ph)/sigma(d)) increases and N-s remains virtually unchanged. Further O-incorporation results in a degradation of optoelectronic properties. A correlation between optical and electrical properties suggests that it occurs when the Fermi level passes through the mid gap (Delta E = E(g)/2) and sigma(o), the prefactor for sigma(d), attains a magnitude similar to that for a-Si:H. N-s has been observed to be less than that reported earlier for a similar optical gap.
机译：氢化非晶硅氧合金（a-SiO：H）膜已通过Arf等离子体沉积工艺在200摄氏度的温度下制备。光学间隙（E（g））的受控变宽。通过在射频等离子体中用CO2稀释SiH4可以得到。折射率（n）降低，暗电导率（sigma（d））以及光电导率（sigma（ph））降低，硅悬挂键密度（Ns）增大，光学间隙的扩大是由O引起的-并入a-Si：H网络。但是，O最佳掺入量sigma（ph）仅降低5倍，光敏性（sigma（ph）/ sigma（d））增加，N-s几乎保持不变。进一步的O-引入导致光电性能的下降。光学和电学性质之间的相关性表明，当费米能级穿过中间间隙（Delta E = E（g）/ 2）和sigma（d）的sigma（o）达到与对于a-Si：H。对于类似的光学间隙，已观察到N-s小于先前报道的Ns。

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