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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >a-Si : H interface optimisation for thin film position sensitive detectors produced on polymeric substrates
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a-Si : H interface optimisation for thin film position sensitive detectors produced on polymeric substrates

机译：a-Si：H界面优化，用于在聚合物基板上生产的薄膜位置敏感探测器

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In this paper we present results concerning the optimisation of the electronic and mechanical properties presented by amorphous silicon (a-Si: H) thin films produced on polyimide (Kapton VN) substrates with different thicknesses (25. 50 and 75 mum) by the plasma enhanced chemical vapour deposition (PECVD) technique. The purpose of this study is to obtain a low defect density as well as low residual stresses (specially at the interface) in order to provide good performances for large area (10 mm wide by 80 mm long) flexible position sensitive detectors. The electrical and optical properties presented by the films will be correlated to the sensor characteristics. The properties of samples have been measured by dark/photoconductivity, constant photocurrent measurements (CPM) and the results have been compared with films deposited on Corning 7059 glass substrates during the same run deposition. The residual stresses were measured using an active optical triangulation and angle resolved scattering. The preliminary results indicate that the thinner polymeric substrate with 25 mum presents the highest density of states, which is associated to the residual stresses and strains associated within the film. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 7]
机译：在本文中，我们介绍了有关通过等离子体在具有不同厚度（25. 50和75 mum）的聚酰亚胺（Kapton VN）衬底上生产的非晶硅（a-Si：H）薄膜所呈现的电子和机械性能进行优化的结果。增强化学气相沉积（PECVD）技术。这项研究的目的是获得低缺陷密度和低残余应力（特别是在界面处），以便为大面积（宽10 mm x长80 mm）柔性位置敏感探测器提供良好的性能。薄膜所呈现的电学和光学特性将与传感器特性相关。样品的性能已通过暗/光导率，恒定光电流测量（CPM）进行了测量，并将结果与​​相同运行沉积期间在康宁7059玻璃基板上沉积的膜进行了比较。使用有源光学三角测量和角度分辨散射测量残余应力。初步结果表明，厚度为25μm的聚合物基板较薄，具有最高的状态密度，这与薄膜内的残余应力和应变有关。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：7]

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