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首页> 外文期刊>Journal of Micromechanics and Microengineering >Piezoresistive gauge factor of hydrogenated amorphous carbon films
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Piezoresistive gauge factor of hydrogenated amorphous carbon films

机译：氢化非晶碳膜的压阻应变系数

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In this paper we report on the transport properties of hydrogenated amorphous carbon (a-C:H) which is an attractive material for strain gauges and can also be used in flow meters, accelerometers and vibrational sensors. The a-C:H films were deposited at -350 V bias voltage on silicon (Si) substrates using plasma assisted chemical vapor deposition (PACVD). Current-voltage characteristics of a-C:H-Si heterojunctions show ohmic behavior within operating voltages of +/- 1 V. In the higher voltage range the Frenkel-Poole mechanism is dominant. Conduction is thermally activated at temperatures ranging from 23 degrees C to 150 degrees C. The activation energy amounts to 0.48 eV. A-C: H resistors are successfully integrated as strain gauges in Si bulk micromachined force sensors. Piezoresistive gauge factors are measured for the a-C: H strain gauge resistors in the temperature range 23-60 degrees C. The measured piezoresistive gauge factors are in between 40 and 90 for a-C:H with resistivities in the range 100-700 M Omega cm.
机译：在本文中，我们报告了氢化无定形碳（a-C：H）的传输特性，这是应变仪的一种有吸引力的材料，也可用于流量计，加速度计和振动传感器。使用等离子辅助化学气相沉积（PACVD）在硅（Si）衬底上以-350 V偏置电压沉积a-C：H膜。 a-C：H / n-Si异质结的电流-电压特性在+/- 1 V的工作电压内显示出欧姆行为。在较高的电压范围内，Frenkel-Poole机制占主导地位。在23摄氏度至150摄氏度的温度范围内对导电进行热激活。激活能量为0.48 eV。 A-C：H电阻器已成功集成为Si体微机械力传感器中的应变仪。在23至60摄氏度的温度范围内测量a-C：H应变计电阻的压阻应变系数。对于a-C：H，电阻率在100-700 MΩcm范围内，测得的压阻应变系数在40到90之间。

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