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首页> 外文期刊>Journal of Photopolymer Science and Technology >The Impact and Optimization of EUV Sensitive Si Hardmask for Sub-20nm Patterning in EUVL with NTD Process
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The Impact and Optimization of EUV Sensitive Si Hardmask for Sub-20nm Patterning in EUVL with NTD Process

机译：NTD工艺在EUVL中亚20nm图案化EUV敏感Si硬掩模的影响和优化

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摘要

The impact of EUV sensitive spin-on silicon hardmask (Si-HM) on EUV lithography have been tested in negative tone development (NTD) process. In the EUV sensitive Si-HM, we have confirmed that EUV chromophore (EC) unit is effective to improve resolution and process margin because it absorbed EUV light efficiently and promoted the acid generation from photo-resist. Moreover, radical generation (RG) unit was also effective to improve lithographic performance because it could assist more acid generation from photo-resist. Using the optimized EUV sensitive Si-HM, EUV lithography in the NTD process was investigated and hp22nm L/S patterning could be achieved successfully. The optimized EUV sensitive Si-HM have also been tested on EUV lithography in positive tone development (PTD) process. Hp24, 26nm L/S patterning could be achieved and photo-speed and DOF margin were improved compared to standard Si-HM. Our EUV sensitive Si-HM could be revealed to show process universality both of PTD and NTD processes.
机译：EUV敏感的旋涂式硅硬掩模（Si-HM）对EUV光刻的影响已在负性显影（NTD）工艺中进行了测试。在EUV敏感的Si-HM中，我们已经证实EUV生色团（EC）单元可以有效地吸收EUV光并促进光致抗蚀剂产生酸，因此可有效提高分辨率和工艺裕度。此外，自由基产生（RG）单元还可以有效改善光刻性能，因为它可以帮助从光刻胶中产生更多的酸。使用优化的EUV敏感Si-HM，研究了NTD工艺中的EUV光刻，可以成功实现hp22nm L / S图案化。优化的EUV敏感Si-HM也已在正性显影（PTD）工艺中的EUV光刻上进行了测试。与标准Si-HM相比，可以实现Hp24、26nm L / S图案化，并提高了感光度和自由度。我们对EUV敏感的Si-HM可以显示出PTD和NTD工艺的通用性。

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