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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer
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Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer

机译：AlN厚度对在高温AlN中间层上生长的GaN层的应变演化的影响

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摘要

The strain evolution of a GaN layer grown on a high- temperature AlN interlayer with varying AlN thickness by metalorganic chemical vapour deposition is investigated. In the growth process, the growth strain changes from compression to tension in the top GaN layer, and the thickness at which the compressive- to- tensile strain transition takes place is strongly influenced by the thickness of the AlN interlayer. It is confirmed from the x- ray diffraction results that the AlN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer. The strain transition process during the growth of the top GaN layer can be explained by the threading dislocation inclination in the top GaN layer. Adjusting the AlN interlayer thickness could change the density of the threading dislocations in the top GaN layer and then change the stress evolution during the top GaN layer's growth.
机译：研究了通过有机金属化学气相沉积在AlN厚度变化的高温AlN中间层上生长的GaN层的应变演化。在生长过程中，顶部GaN层中的生长应变从压缩变化为拉伸，并且发生压缩应变向拉伸应变转变的厚度受到AlN中间层厚度的强烈影响。从x射线衍射结果证实，AlN中间层对将相对压缩应变引入顶部GaN层具有显着的影响。顶部GaN层生长过程中的应变转变过程可以通过顶部GaN层中的位错倾角来解释。调整AlN中间层的厚度可以改变顶部GaN层中螺纹位错的密度，然后改变顶部GaN层生长过程中的应力演变。

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