Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant

Wang H; Ho HP; Lo KC; Cheah KW

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Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant

机译：使用DMHy掺杂剂通过（N，Ga）共掺杂生长p型ZnO薄膜

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We investigate p-type doping in ZnO prepared by metal-organic chemical vapour deposition with dimethylhydrazine (DMHy) as the nitrogen dopant source. Results obtained by x-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 degrees C for efficient nitrogen incorporation and that nitrogen doping is critically influenced by growth conditions, e.g. the N/Ga flux ratio in growth. Within an appropriate N/Ga flux ratio range, p-type ZnO can be realized. The effect of the N/Ga flux ratio on the conductivity conversion of ZnO is reported. The extrinsic nitrogen acceptor level is calculated to be about 160 meV from low-temperature photoluminescence spectra.

机译：我们研究了以二甲基肼（DMHy）为氮掺杂源的金属有机化学气相沉积制备的ZnO中的p型掺杂。通过X射线光电子能谱获得的结果表明，DMHy在500至550摄氏度之间显示出窄的温度范围，以有效地掺入氮，并且氮掺杂受生长条件（例如生长温度）的严重影响。生长中的N / Ga通量比。在适当的N / Ga通量比范围内，可以实现p型ZnO。报道了N / Ga通量比对ZnO的电导率转化的影响。从低温光致发光光谱计算出，外部氮受体水平为约160meV。

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2007年第15期|共4页
作者
Wang H; Ho HP; Lo KC; Cheah KW;
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正文语种 eng
中图分类应用物理学;
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MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; ACCEPTOR; EXCITON; DEVICES;

机译：分子束外延;光学;光致发光;接受体;激子;器件;

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1. Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant [J] . Wang H, Ho HP, Lo KC, Journal of Physics, D. Applied Physics: A Europhysics Journal . 2007,第15期

机译：使用DMHy掺杂剂通过（N，Ga）共掺杂生长p型ZnO薄膜
2. Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N [J] . Chien-Yie Tsay, Wan-Yu Chiu Coatings . 2020,第11期

机译：通过共掺杂GA和N增强ZnO透明半导体薄膜的P型传导的电性能和稳定性
3. p-Type Sb-Doped ZnO Thin Films Prepared by Metallorganic Chemical Vapor Deposition Using Metallorganic Dopant [J] . Zhao JZ, Liang HW, Sun JC, Electrochemical and solid-state letters . 2008,第12期

机译：金属有机掺杂剂通过金属有机化学气相沉积制备p型掺Sb的ZnO薄膜
4. Co-doping Deposition of p-type ZnO Thin Films using KrF Excimer Laser Ablation [C] . Kenji Ebihara, Tamiko Ohshima, Tomoaki Ikegami, MRS Meeting . 2003

机译：使用KRF准分子激光烧蚀的P型ZnO薄膜的共掺杂沉积
5. Growth and characterization of thin-film ZnO and Cu(In,Ga)Se(2) for photovoltaic applications. [D] . Zafar, Syed Arif. 1997

机译：用于光伏应用的薄膜ZnO和Cu（In，Ga）Se（2）的生长和表征。
6. Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors [O] . Ching-Ting Lee, Chia-Chi Chen, Hsin-Ying Lee -1

机译：使用n型Al：ZnO和p型NiO薄膜晶体管的三维堆叠互补薄膜晶体管
7. Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N [O] . Chien-Yie Tsay, Wan-Yu Chiu 2020

机译：通过共掺杂GA和N增强ZnO透明半导体薄膜的P型传导的电性能和稳定性
8. p-Type ZnO Thin Films Grown by MOCVD. [R] . Li, X., Asher, S. E., Keyes, B. M., 2005

机译：通过mOCVD生长的p型ZnO薄膜。

Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant

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