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Orientation control and thermoelectric properties of FeSb_2 films

机译:FeSb_2薄膜的取向控制和热电性能

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摘要

FeSb_2 has a high potential for technological applications due to its colossal thermoelectric power, giant carrier mobility and large magnetoresistance. Earlier, growth of 〈1 0 1〉-textured FeSb _2 films on quartz (0 0 0 1) substrates has been reported. Here magnetron sputtering is used to obtain 〈0 0 2〉-textured FeSb _2 films by employing a pre-deposited FeSb_2 thin-film layer as template. The in-plane thermoelectric properties of FeSb_2 films with different orientations were studied and compared. The anisotropy of FeSb_2 is shown to have an important effect on the transport properties of FeSb_2 films. Orientation control of the FeSb _2 films could be significant for their property optimization and thus highlight their application potential.
机译:FeSb_2具有巨大的热电势,巨大的载流子迁移率和较大的磁阻,因此在技术应用方面具有很高的潜力。以前,已经报道了在石英(0 0 0 1)衬底上生长<1 0 1>织构的FeSb _2膜的方法。在这里,磁控溅射通过使用预沉积的FeSb_2薄膜层作为模板来获得具有<0 0 2>纹理的FeSb _2膜。研究并比较了不同取向的FeSb_2薄膜的面内热电性能。 FeSb_2的各向异性对FeSb_2薄膜的传输性能有重要影响。 FeSb _2薄膜的取向控制对其性能优化可能具有重要意义,从而突出了其应用潜力。

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