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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb, Sr) TiO3 films
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Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb, Sr) TiO3 films

机译：脉冲激光沉积（Pb，Sr）TiO3薄膜的铁电性和电阻的负温度系数

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摘要

(Pb, Sr)TiO3 films deposited on Pt/SiO2/Si substrates by pulsed-laser deposition (PLD) at 400 degrees C with oxygen pressures ranging from 50 to 200 mTorr have been investigated. The paraelectricity-to-ferroelectricity transition of films depends on the oxygen pressure during deposition. Films deposited at 200 mTorr exhibit paraelectric-like nature, whereas films deposited at lower pressures present the ferroelectric characteristic. The (Pb, Sr) TiO3 film is found to exhibit a negative temperature coefficient of resistance (NTCR) at the measurement temperature ranging from 30 to 390 degrees C. This work demonstrates that the ferroelectricity/paraelectricity and the temperature coefficient of resistance of (Pb, Sr) TiO3 films could be controlled by oxygen pressures during PLD.
机译：研究了在400摄氏度，氧气压力为50至200毫托的条件下通过脉冲激光沉积（PLD）在Pt / SiO2 / Si衬底上沉积的（Pb，Sr）TiO3薄膜。膜的顺电至铁电转变取决于沉积过程中的氧气压力。以200 mTorr沉积的薄膜表现出顺电性质，而在较低压力下沉积的薄膜则表现出铁电特性。发现（Pb，Sr）TiO3膜在30至390摄氏度的测量温度下表现出负电阻温度系数（NTCR）。这项工作证明了（Pb，Sb）的铁电/顺电和电阻温度系数，Sr）TiO3薄膜可以通过PLD期间的氧气压力来控制。

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