...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures
【24h】

Influence of aluminium incorporation on the structure of ZrN films deposited at low temperatures

机译：铝的掺入对低温沉积ZrN薄膜结构的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have studied the influence of Al incorporation in the crystalline structure of ZrN thin films deposited by dc magnetron sputtering at low temperature. The amount of aluminium in the films depends directly on the power applied to the aluminium cathode during the deposition. Energy dispersive x-ray analysis and x-ray diffraction (XRD) were used to obtain the chemical composition and crystalline structure of the films, respectively. When Al atoms are incorporated into the ZrN coatings, the strong ZrN (2 0 0) orientation is modified by a combination of other ones such as ZrN (1 1 1), Zr_3N_4 (21 1) and hexagonal A1N (10 0) as detected from the XRD spectra for high aluminium concentrations. Fourier-transform infrared spectroscopy allowed us to identify oxides and nitrides, ZrO, AlO and A1N, incorporated into the deposited films. The effect of a bias voltage applied to the substrate has also been investigated and related to the changes in the microstructure and in the nanohardness values of the ZrA1N films.
机译：我们研究了Al掺入对低温磁控溅射溅射ZrN薄膜晶体结构的影响。膜中铝的含量直接取决于沉积过程中施加到铝阴极的功率。使用能量色散X射线分析和X射线衍射（XRD）分别获得膜的化学组成和晶体结构。当将Al原子掺入ZrN涂层中时，检测到的强ZrN（2 0 0）取向会被其他ZrN（1 1 1），Zr_3N_4（21 1）和六角形AlN（10 0）的组合修饰从XRD光谱获得高铝浓度。傅里叶变换红外光谱使我们能够识别掺入沉积膜中的氧化物和氮化物ZrO，AlO和AlN。还已经研究了施加到基板上的偏置电压的影响，并将其与ZrAlN薄膜的微观结构和纳米硬度值的变化相关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号