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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1010) and semipolar (112 2) orientations
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Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1010) and semipolar (112 2) orientations

机译：压电场对以非极性（1010）和半极性（112 2）取向制备的InGaN / GaN量子阱发光二极管的光电性能的影响

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摘要

Optical and electrical characteristics of InGaN/GaN quantum-well (QW) light-emitting diodes (LEDs) are the subjects of this study. Samples were prepared on nonpolar (1 0 1 0) and semipolar (1 1 2 2) orientations of bulk GaN substrates. Electrical-bias-applied photoluminescence was employed as a characterization technique. It was confirmed that saturation of reverse photocurrent occurred around 0 V in nonpolar LEDs and at positive voltages in (1 1 22)-oriented LEDs, while our previous study found negative voltages in (0 0 0 1)-oriented LEDs (Masui et al 2008 J. Phys. D: Appl. Phys. 41 165105). These results indicated that (1 1 2 2)-oriented InGaN/GaN QWs experience piezoelectric fields being in the same direction as the built-in field. Piezoelectric field intensity was estimated to be —0.3 MV cm~(-1) in the (1 122)-oriented QW structure. Spectral comparison between photoluminescence and electroluminescence of the LED samples exhibited a tendency that spectral differences were insignificant in single-QW LEDs.
机译：InGaN / GaN量子阱（QW）发光二极管（LED）的光电特性是本研究的主题。在块状GaN衬底的非极性（1 0 1 0）和半极性（1 1 2 2）取向上制备样品。施加电偏压的光致发光被用作表征技术。可以肯定的是，在非极性LED中，反向光电流的饱和发生在0 V左右，在（1 1 22）方向的LED中为正电压，而我们先前的研究发现，在（0 0 0 1）方向的LED中为负电压（Masui等。 2008 J.Phys.D：Appl.Phys.41165105）。这些结果表明，（1 1 2 2）取向的InGaN / GaN QW经历的压电场与内置场的方向相同。在（1122）取向的QW结构中，压电电场强度估计为-0.3MV cm〜（-1）。 LED样品的光致发光和电致发光之间的光谱比较显示出一种趋势，即单QW LED的光谱差异不明显。

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