...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices
【24h】

Modelling wafer bow in silicon-polycrystalline CVD diamond substrates for GaN-based devices

机译：在基于GaN的器件的硅多晶CVD金刚石衬底中建模晶圆弓形

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Composite silicon-polycrystalline chemical vapour deposition (CVD) diamond wafers are potential substrates for GaN-based devices for use in harsh environments due to their high thermal conductivity and chemical stability. When cooled from a typical diamond deposition temperature of approximately 800 to 25 °C wafer bowing arises from a mismatch in the coefficients of thermal expansion of silicon and polycrystalline diamond. In this paper 100 mm diameter silicon-polycrystalline diamond wafers have been modelled using ANSYS finite element software to investigate their bowing behaviour as a function of temperature and geometry. The maximum bow of a wafer occurred where the thicknesses of both the silicon and polycrystalline diamond layers was almost identical; this has been confirmed using analytical methods. Strategies are discussed for reducing wafer bow.
机译：复合硅多晶化学气相沉积（CVD）金刚石晶圆由于其高导热性和化学稳定性而成为潜在的GaN基器件的衬底，可用于恶劣的环境。当从大约800到25°C的典型金刚石沉积温度冷却时，晶圆弯曲是由硅和多晶金刚石的热膨胀系数不匹配引起的。在本文中，已使用ANSYS有限元软件对直径为100 mm的硅多晶金刚石晶片进行建模，以研究其弯曲行为随温度和几何形状的变化。在硅和多晶金刚石层的厚度几乎相同的情况下，发生晶片的最大弯曲。这已经通过分析方法得到证实。讨论了减少晶圆弯曲的策略。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号