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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Thickness dependence of magnetic and magneto-transport properties of polycrystalline Fe3O4 films prepared by reactive sputtering at room temperature
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Thickness dependence of magnetic and magneto-transport properties of polycrystalline Fe3O4 films prepared by reactive sputtering at room temperature

机译：室温反应溅射制备的多晶Fe3O4薄膜的磁和磁输运性质的厚度依赖性

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摘要

At room temperature, polycrystalline Fe3O4 films with thicknesses in the range 5-1120 nm have been prepared by reactive sputtering. Transmission electron microscopy imaging shows that uniform Fe3O4 grains are well separated by grain boundaries and their size decreases with film thickness. The change of resistivity as a function of temperature reveals a grain boundary dominated electron tunnelling mechanism. The magnetoresistance MR = (rho(H) - rho(0))/rho(0) measured at room temperature for the films thicker than 200 nm is similar to -7.4% under a magnetic field of 46 kOe, which is among the largest values ever reported for Fe3O4 films under the same measuring conditions. As the thickness reduces from 80 to 5 nm, MR decreases from -6.5% to -1.1% due to the enhanced spin-flip scattering at film and grain surfaces. [References: 20]
机译：在室温下，已经通过反应溅射制备了厚度在5-1120nm范围内的多晶Fe 3 O 4膜。透射电子显微镜成像表明，均匀的Fe3O4晶粒被晶界很好地隔开，并且其尺寸随膜厚的减小而减小。电阻率随温度的变化揭示了晶界主导的电子隧穿机理。厚200 nm的薄膜在室温下测得的磁阻MR =（rho（H）-rho（0））/ rho（0）在46 kOe磁场下是-7.4％，这是最大的值在相同的测量条件下，Fe3O4薄膜所记录的数值。随着厚度从80纳米减小到5纳米，由于薄膜和晶粒表面的自旋翻转散射增强，MR从-6.5％降低到-1.1％。 [参考：20]

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