Electric field induced suppression of the magnetoresistance of dilute magnetic semiconductor trilayers

Z. G. Yu; M. E. Flatte

首页> 外文期刊>Journal of Superconductivity >Electric field induced suppression of the magnetoresistance of dilute magnetic semiconductor trilayers

【24h】

Electric field induced suppression of the magnetoresistance of dilute magnetic semiconductor trilayers

机译：电场诱导的稀磁半导体三层磁阻的抑制

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime that has no analog in metals. Here high fields are argued to substantially reduce the magnetoresistance observable in a recent experiment on magnetic-semiconductornonmagnetic-semiconductor-magnetic-semiconductor trilayers.

机译：在半导体自旋电子器件中，半导体通常是轻掺杂的且不退化的，而适度的电场可以控制载流子的运动。我们最近通过持续考虑电场效应和非简并电子统计数据，得出了半导体中自旋极化的漂移扩散方程，并确定了在金属中没有类似物的高场扩散机制。在这里，高磁场被认为可以显着降低最近在磁-半导体-非磁-半导体-磁-半导体三层上的实验中可观察到的磁阻。

著录项

来源
《Journal of Superconductivity》 |2003年第1期|共4页
作者
Z. G. Yu; M. E. Flatte;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类工程物理学;
关键词
Magnetoresistance; Semiconductor spintronics; Spin transport;

机译：磁阻;半导体自旋电子学;自旋输运;

相似文献

外文文献
中文文献
专利

1. Electric field induced suppression of the magnetoresistance of dilute magnetic semiconductor trilayers [J] . Z. G. Yu, M. E. Flatte Journal of Superconductivity . 2003,第1期

机译：电场诱导的稀磁半导体三层磁阻的抑制
2. Spin dynamics in a diluted magnetic semiconductor quantum well studie by pump-probe absorption spectroscopy: Magnetic-field-induced suppression of electron-spin relaxation [J] . A. Murayama, K. Seo, K. Nishibayashi, Applied Physics Letters . 2006,第26期

机译：泵浦探针吸收光谱法在稀释的磁性半导体量子阱研究室中的自旋动力学：磁场诱导的电子自旋弛豫的抑制
3. Simultaneous Effects of Electric and Magnetic Fields Induced Optical Gain in a Diluted Nitrogen Group III–V Semiconductor Quantum Dot [J] . Mageshwari P. Uma, Peter A. John, Lee Chang Woo Journal of computational and theoretical nanoscience . 2017,第5期

机译：电场诱导光学增益在稀释的氮族III-V半导体量子点中的同时效应
4. Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga,Mn)As Dilute Magnetic Semiconductors [C] . K Ghosh, Mohammad Arif, T.Kehl, Symposium on GaN, AIN, InN and Their Alloys . 2005

机译：低温退火对（GA，Mn）为稀磁半导体的高场磁阻和霍尔效应的影响
5. Multiband models for colossal magnetoresistance materials and diluted magnetic semiconductors. [D] . Popescu, Florentin. 2007

机译：巨大的磁阻材料和稀磁半导体的多频带模型。
6. Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor [O] . Toshiki Kanaki, Hiroki Yamasaki, Tomohiro Koyama, -1

机译：基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
7. Effects of electric field on magnetic properties of $$Mn_{x}Ge_{1-x}$$ M n x G e 1 - x diluted magnetic semiconductors [O] . Gezahegn Assefa, P. Singh 2015

机译：电场对$$ Mn_ {x} Ge_ {1-x} $$ M n x G e 1-x稀磁半导体的磁性能的影响

Electric field induced suppression of the magnetoresistance of dilute magnetic semiconductor trilayers

摘要

著录项

相似文献

相关主题

期刊订阅