...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of the Chinese Society of Mechanical Engineers, Series C: Transactions of the Chinese Society of Mechanical Engineers >Fabricating Nanoscale Trapezium Groove on Silicon Substrate at a Constant Down Force and Cutting Force Calculation
【24h】

Fabricating Nanoscale Trapezium Groove on Silicon Substrate at a Constant Down Force and Cutting Force Calculation

机译：以恒定的下压力在硅基底上制备纳米级梯形沟槽并计算切削力

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The study uses an offset cutting method at a constant down force for cutting of nanoscale trapezium groove on Si substrate. The study proposes a hypothetical concept that the specific down force energy (SDFE) values of different axles are the same constant value. According to the SDFE theoretical model as well as the known depth of nanocutting and shape of cutting tool, the study induces the theoretical equations for calculation of down force and cutting force of each cutting pass for cutting of nanoscale trapezium groove on single-crystal silicon (Si). From the experiment, the SDFE value for nanocutting of single-crystal Si is found. The study firstly conducts the simulation of cutting nanoscale trapezium groove on single crystal at a constant down force by offset cutting method for the different cutting layer by SDFE theory. The simulation results of cutting nanoscale trapezium groove by SDFE theory are compared with the experimental results of cutting nanoscale trapezium groove by AFM. The study applies SDFE equation to calculate the cutting force of each cutting pass of different cutting layer of offset cutting method. Besides, using the simulation model of three-dimensional quasi-steady molecular statics nanocutting, the study simulates the offset cutting method of the 1st cutting layer and acquires the down force and cutting forces of the 1st to 3rd cutting passes. The cutting forces acquired by above two methods are compared, then it could verify that the cutting forces obtained by using SDFE theory is acceptable for cutting of nanoscale trapezium groove on single-crystal Si.
机译：该研究使用偏置切割方法在恒定的下压力下切割Si衬底上的纳米级梯形凹槽。该研究提出了一个假想的概念，即不同车轴的下压力能量（SDFE）值是相同的恒定值。根据SDFE理论模型以及已知的纳米切削深度和切削工具的形状，研究得出了用于在单晶硅上切削纳米级梯形凹槽的每个切削道的向下力和切削力的理论方程式（ Si）。从该实验中，发现了用于单晶硅纳米切割的SDFE值。该研究首先通过SDFE理论对不同切割层采用偏置切割法在恒定的下压力下对单晶纳米梯形凹槽进行了切割模拟。将用SDFE理论切割纳米级梯形凹槽的模拟结果与通过AFM切割纳米级梯形凹槽的实验结果进行了比较。本研究运用SDFE方程计算了偏心切割法不同切割层的各道次的切削力。此外，利用三维准稳态分子静态纳米切割的模拟模型，研究了第一切割层的偏移切割方法，并获得了第一至第三切割道次的下压力和切割力。比较了以上两种方法获得的切削力，可以验证采用SDFE理论获得的切削力对于单晶硅纳米级梯形沟槽的切削是可接受的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号