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首页> 外文期刊>Journal of the Korean Physical Society >Deposition and Characterization of Porous Low-Dielectric-ConstantSiOC(-H) Thin Films Deposited from TES/O_2 precursors by UsingPlasma-Enhanced Chemical Vapor Deposition
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Deposition and Characterization of Porous Low-Dielectric-ConstantSiOC(-H) Thin Films Deposited from TES/O_2 precursors by UsingPlasma-Enhanced Chemical Vapor Deposition

机译:等离子体增强化学气相沉积法沉积并表征TES / O_2前驱体形成的多孔低介电常数SiOC(-H)薄膜

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摘要

Low-dielectric-constant SiOC(-H) thin films were deposited on p-type Si(100) substrates by usingplasma enhanced chemical vapor deposition (PECVD) from triethoxysilane (TES; C_6H_(16)O_3Si) andoxygen gas as precursors. A detailed characterization, such as the chemical structure, bondingconfigurations and dielectric constant (k), of the SiOC(-H) films was performed. A possible mech-anism responsible for the reduction in the dielectric constant of the SiOC(-H) is described. In theSiOC(-H) film, the CH_3group as an end group is introduced into the -O- Si-network, therebyreducing the density to decrease the dielectric constant. X-ray photoelectron spectroscopic (XPS)studies were carried out to study the binding energies of Si-C, O-Si-O, C-C(H), C=C, C-O andC=O bonds in the SiOC(-H) films as functions of the flow rate ratio. The dielectric constant of theSiOC(-H) film was evaluated by using the C-V measurements for a metal-insulator-semiconductor(MIS), Al/SiOC(-H)/p-Si(100), structure.
机译:通过使用三乙氧基硅烷(TES; C_6H_(16)O_3Si)和氧气为前驱体的等离子体增强化学气相沉积(PECVD),在p型Si(100)衬底上沉积低介电常数的SiOC(-H)薄膜。对SiOC(-H)薄膜进行了详细的表征,如化学结构,键合构型和介电常数(k)。描述了可能导致SiOC(-H)介电常数降低的机理。在SiOC(-H)膜中,将作为端基的CH_3基团引入-O-Si-网络中,从而降低密度以降低介电常数。通过X射线光电子能谱(XPS)研究了SiOC(-H)薄膜中Si-C,O-Si-O,CC(H),C = C,CO和C = O键的结合能作为流量比的函数。 SiOC(-H)膜的介电常数通过使用C / V测量来评估金属绝缘体半导体(MIS),Al / SiOC(-H)/ p-Si(100)结构的介电常数。

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