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首页> 外文会议>The 22nd International photovoltaic science and engineering conference >Deposition and characterization of ZnO, ZnO:Al thin films deposited by rf-sputtering for Cu(In,Ga)Se2 thin film solar cells processing by physical vapor deposition
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Deposition and characterization of ZnO, ZnO:Al thin films deposited by rf-sputtering for Cu(In,Ga)Se2 thin film solar cells processing by physical vapor deposition

机译：射频溅射通过物理气相沉积处理Cu（In，Ga）Se2薄膜太阳能电池的ZnO，ZnO：Al薄膜的沉积和表征

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In this work we report the results of the deposition and characterization of ZnO and ZnO:Al thin films prepared by RF-sputtering and its application for obtaining Cu(In,Ga)Se2 (CIGS) solar cells,using as the window material a chemical bath deposited CdS layer.CIGS thin films were deposited by co-evaporation on a soda-lime/Mo to obtain solar cells in a one step process,thus low cost techniques can be used to obtain high efficiency thin film photovoltaic devices.[1] ZnO and ZnO:Al films were deposited for different RF-power and Ar pressure in the deposition chamber in order to obtain the best films for optimizing the CIGS solar cells efficiencies.In our photovoltaic devices,according to its resistivity values we use the ZnO as a buffer layer deposited on top of the CdS film.[2] On the other hand,due to its high conductivity and good transparency,ZnO:Al films,deposited onto the ZnO film,acts as the front electrode.[3] ZnO,ZnO:Al and CIGS films characterization was performed by X-ray diffraction,optical transmission,scanning electron microscopy for morphology details and Energy Dispersion Spectroscopy for chemical composition studies of CIGS thin films.We have obtained ZnO and ZnO:Al films with appropriate optical,structural and electric characteristics for CIGS solar cell processing.Results for CIGS films have shown high quality polycrystalline films with very uniform appearance and grain sizes of tenths of a micrometer; the chemical composition is very close to the stoichiometry of the Cu(In,Ga)Se2.After processing the ZnO,ZnO:Al and CIGS thin films into solar cells we have achieved conversion efficiency values close to 10 ％.
机译：在这项工作中，我们报告了通过射频溅射制备的ZnO和ZnO：Al薄膜的沉积和表征结果，以及其在使用窗材料作为化学物质的情况下在获得Cu（In，Ga）Se2（CIGS）太阳能电池中的应用。浴沉积CdS层。通过共蒸发将CIGS薄膜沉积在钠钙/ Mo上以一步法获得太阳能电池，因此可以使用低成本技术获得高效率的薄膜光伏器件。[1]为了获得最佳薄膜以优化CIGS太阳能电池的效率，在沉积室中沉积了ZnO和ZnO：Al膜用于不同的RF功率和Ar压力。在我们的光伏器件中，根据其电阻率值，我们使用ZnO作为在CdS膜顶部沉积的缓冲层。[2]另一方面，由于其高导电性和良好的透明度，沉积在ZnO膜上的ZnO：Al膜充当前电极。[3] ZnO，ZnO：Al和CIGS薄膜的表征通过X射线衍射，光学透射，扫描电子显微镜进行形态学细节分析和能量分散光谱进行CIGS薄膜的化学成分研究。我们已经获得了合适的ZnO和ZnO：Al薄膜CIGS薄膜的光学，结构和电学特性。CIGS薄膜的结果表明，高质量的多晶薄膜具有非常均匀的外观和十分之一微米的晶粒尺寸。 ZnO，ZnO：Al和CIGS薄膜加工成太阳能电池后，化学转化率非常接近Cu（In，Ga）Se2的化学计量。转化效率值接近10％。

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