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首页> 外文会议>International photovoltaic science and engineering conference >Deposition and characterization of ZnO, ZnO:Al thin films deposited by rf-sputtering for Cu(In,Ga)Se2 thin film solar cells processing by physical vapor deposition
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Deposition and characterization of ZnO, ZnO:Al thin films deposited by rf-sputtering for Cu(In,Ga)Se2 thin film solar cells processing by physical vapor deposition

机译：ZnO，ZnO：Al薄膜的沉积和表征通过RF-溅射沉积Cu（In，Ga）SE2薄膜太阳能电池通过物理气相沉积处理

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In this work we report the results of the deposition and characterization of ZnO and ZnO:Al thin films prepared by RF-sputtering and its application for obtaining Cu(In,Ga)Se2 (CIGS) solar cells,using as the window material a chemical bath deposited CdS layer.CIGS thin films were deposited by co-evaporation on a soda-lime/Mo to obtain solar cells in a one step process,thus low cost techniques can be used to obtain high efficiency thin film photovoltaic devices.[1] ZnO and ZnO:Al films were deposited for different RF-power and Ar pressure in the deposition chamber in order to obtain the best films for optimizing the CIGS solar cells efficiencies.In our photovoltaic devices,according to its resistivity values we use the ZnO as a buffer layer deposited on top of the CdS film.[2] On the other hand,due to its high conductivity and good transparency,ZnO:Al films,deposited onto the ZnO film,acts as the front electrode.[3] ZnO,ZnO:Al and CIGS films characterization was performed by X-ray diffraction,optical transmission,scanning electron microscopy for morphology details and Energy Dispersion Spectroscopy for chemical composition studies of CIGS thin films.We have obtained ZnO and ZnO:Al films with appropriate optical,structural and electric characteristics for CIGS solar cell processing.Results for CIGS films have shown high quality polycrystalline films with very uniform appearance and grain sizes of tenths of a micrometer; the chemical composition is very close to the stoichiometry of the Cu(In,Ga)Se2.After processing the ZnO,ZnO:Al and CIGS thin films into solar cells we have achieved conversion efficiency values close to 10 ％.
机译：在这项工作中，我们报告了通过RF-溅射制备的ZnO和ZnO和ZnO：Al薄膜的沉积和表征的结果及其用于使用作为窗口材料的Cu（In，Ga）Se2（CIGS）Se2（CIGS）太阳能电池的应用浴沉积的CDS层。通过在钠钙/ Mo上的共蒸发沉积薄膜，以在一个步骤过程中获得太阳能电池，因此可以使用低成本技术来获得高效率的薄膜光伏器件。[1] ZnO和ZnO：Al膜在沉积室中沉积不同的RF功率和Ar压力，以获得用于优化CIGS太阳能电池效率的最佳薄膜。根据其使用ZnO的电阻率值，我们的光伏器件是如此缓冲层沉积在CD膜的顶部。[2]另一方面，由于其高导电率和良好的透明度，ZnO：Al薄膜沉积在ZnO膜上，充当前电极。[3] ZnO，ZnO：Al和CIGS膜表征是通过X射线衍射，光学传输，扫描电子显微镜进行形态细节和能量分散光谱进行CIGS薄膜的化学成分研究。我们已经获得了合适的ZnO和ZnO：Al膜CIGS太阳能电池处理的光学，结构和电气特性。用于CIGS薄膜的结果显示出高质量的多晶膜，具有非常均匀的外观和十分之一的粒径;化学组合物非常接近Cu（In，Ga）Se2的化学计量。加工ZnO，ZnO：Al和CIGS薄膜到太阳能电池中，我们已经实现了接近10％的转化效率值。

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