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首页> 外文期刊>Journal of the Korean Physical Society >Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET
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Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

机译：3-D SONOS闪存单元阵列晶体管的编程/擦除效率和保留特性的比较研究：从双栅极FET和FinFET到全栅FET的结构方法

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摘要

The comparative study on Program/Erase (P/E) efficiency of three-dimensional (3-D) SONOS memory cell transistors is performed by comparing Double Gate (DG), FinFET with Gate All Around (GAA) structures. GAA-CAT is superior to DG-CAT and/or Fin-CAT in terms of all of P/E efficiency, low voltage operation and the integration density. It is shown that this superiority results from the higher FN current in P/E condition (due to the E-field concentration effect) rather than the gate controllability in a read operation condition. Furthermore, as D_(si) decreases, the superiority of GAA-CAT becomes more prominent due to the feature of the E-field concentration effect. It is shown that GAA-CAT is very promising candidate for a low voltage P/E efficient flash memory cell transistor. Remaining or further challenging issues will be the body bias control and the scheme for an erasure in block units. In terms of the retention properties, both GAA-CAT and DG-CAT show the superior retention to Fin-CAT due to the corner effect of Fin-CAT. In the case of Fin-CAT, the maximum E-field is higher by 1.5 times than that of GAA-CAT and retention characteristic of Fin-CAT is inferior to those of GAA-CAT and DG-CAT by about three orders of magnitude.
机译：通过比较双栅极（DG），FinFET与栅极全包围（GAA）结构，对三维（3-D）SONOS存储单元晶体管的编程/擦除（P / E）效率进行了比较研究。 GAA-CAT在所有P / E效率，低压操作和集成密度方面均优于DG-CAT和/或Fin-CAT。结果表明，这种优势是由于P / E条件下的FN电流较高（由于电场集中效应）而不是读操作条件下的栅极可控性引起的。此外，随着D_（si）的减小，由于电场集中效应的特征，GAA-CAT的优势变得更加突出。结果表明，GAA-CAT是低电压P / E高效闪存单元晶体管的非常有希望的候选者。剩下的或进一步具有挑战性的问题将是身体偏差控制和以块为单位的擦除方案。就保留特性而言，由于Fin-CAT的角效应，GAA-CAT和DG-CAT均显示出优于Fin-CAT的保留。对于Fin-CAT，最大电场强度是GAA-CAT的1.5倍，Fin-CAT的保持特性比GAA-CAT和DG-CAT的保持率低三个数量级。

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