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首页> 外文期刊>日本応用磁気学会学術講演概要集 >Low Frequency Noise in MgO Tunnel Junctions
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Low Frequency Noise in MgO Tunnel Junctions

机译：MgO隧道结中的低频噪声

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摘要

Low frequency noise measurement has been performed in MgO based runnel junctions with resistance in the range of 10{sup}5 -10{sup}6 Ωm{sup}2 and various MR ratio were investigated. Wideband noise measurement in the frequency range of 1 Hz to 100 KHz shows magnetically dependent pure 1/f power spectra at low frequency. The 1/f noise scales with bias voltage as V{sup}2 indicating that the 1/f noise can be attributed to MTJ resistance fluctuations. At fixed magnetic field at bias levels of up to about 200mV the Lorentzian effect observed in antiparallel magnetization of 122% MR sample. This noise can be attributed to charge taps in the oxide barrier. The noise level is found to be dependent on noise level between the antiparallel state and parallel state orientation magnetization is observed where antiparallel state dominates in both current direction. Direction of current flow through the sample also affect the noise level. This observation maybe due to effect near the oxide barrier. The noise level in 0% MR sample is the highest maybe due to low quality oxide barrier.
机译：在基于MgO的漏斗结中进行了低频噪声测量，其电阻范围为10 {sup} 5 -10 {sup} 6Ωm{sup} 2，并研究了各种MR比。在1 Hz至100 KHz频率范围内的宽带噪声测量显示了低频下与磁场有关的纯1 / f功率谱。 1 / f噪声的偏置电压为V {sup} 2，表明1 / f噪声可归因于MTJ电阻波动。在高达约200mV的偏置水平的固定磁场下，在122％MR样品的反平行磁化中观察到的洛伦兹效应。该噪声可归因于氧化物势垒中的电荷抽头。发现噪声水平取决于反平行状态与平行状态取向磁化之间的噪声水平，其中在两个电流方向上反平行状态占主导。流经样品的电流方向也会影响噪声水平。该观察结果可能是由于靠近氧化物势垒的影响。 0％MR样品中的噪声水平最高，可能是由于低质量的氧化物阻挡层所致。

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