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首页> 外文期刊>ACS applied materials & interfaces >Ultrastable Quantum-Dot Light-Emitting Diodes by Suppression of Leakage Current and Exciton Quenching Processes
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Ultrastable Quantum-Dot Light-Emitting Diodes by Suppression of Leakage Current and Exciton Quenching Processes

机译：通过抑制漏电流和激子猝灭过程的超稳定量子点发光二极管

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摘要

A study of hybrid inverted quantum-dot (QD) light-emitting diodes constructed with and without Al2O3 interlayers is presented. The Al2O3 interlayers are deposited at ZnO/QDs or/and QDs/4,4'-bis(carbazol-9-yl)biphenyl interfaces, resulting in large improvement of device performance, including luminance, current efficiency, and device lifetime. Especially, the devices with QD emitters sandwiched by two Al2O3 layers exhibits outstanding performance, the longest operation lifetime, and mediate efficiency. The maximum current efficiency of 15.3 cd/A is obtained, an enhancement factor of 35% in comparison to that (11.3 cd/A) of conventional device without Al2O3 layer. Moreover, device lifetime is also largely enhanced, over 110 000 h for the device containing two Al2O3 interlayers, nearly 40% enhancement relative to that of conventional device that shows a lifetime of only 80 000 h. On the basis of electrical property and photoluminescence spectroscopy studies, we demonstrate that the Al2O3 interlayers play crucial roles in suppressing the leakage current across the device and reducing exciton quenching induced by ZnO.
机译：提出了一种具有和不具有Al2O3中间层的混合倒置量子点（QD）发光二极管的研究。 Al2O3中间层沉积在ZnO / QDs或/和QDs / 4,4'-双（咔唑-9-基）联苯界面上，从而大大改善了器件性能，包括亮度，电流效率和器件寿命。尤其是，具有QD发射器并被两层Al2O3层夹在中间的器件具有出色的性能，最长的使用寿命和中等的效率。获得的最大电流效率为15.3 cd / A，与没有Al2O3层的常规器件的电流效率（11.3 cd / A）相比，提高了35％。此外，器件寿命也大大提高，对于包含两个Al2O3中间层的器件，其使用寿命超过110000小时，相对于仅具有80000 h寿命的传统器件，其寿命提高了近40％。基于电学性质和光致发光光谱学研究，我们证明Al2O3中间层在抑制器件中的漏电流和减少ZnO引起的激子猝灭方面起着至关重要的作用。

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