IN SITU THICKNESS CONTROL DURING PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS SILICON FILMS BY TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS

Neitzert HC.; Kunst M.; Nell MEA.; Hirsch W.

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IN SITU THICKNESS CONTROL DURING PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS SILICON FILMS BY TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS

机译：用时间分辨微波电导率法测量氢化非晶硅膜的等离子体沉积原位厚度

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Transient photoconductivity measurements have been performed in situ during plasma-enhanced chemical vapor deposition of amorphous hydrogenated silicon by a contactless method that uses the change of the microwave reflection after laser pulse illumination. Through the use of the interference pattern of the amplitude of the transients of microwave reflection during the layer growth, the actual thickness of the amorphous him can be determined. In the case of crystalline silicon substrates, the change in the light absorption in the substrate modified by the growth of the amorphous layer is measured directly. An example of the optimization of antireflective layers on crystalline silicon substrates is shown. A good agreement is found between the experimental data and calculations of optical reflection and transmission on the multilayer structures. [References: 13]

机译：瞬态光电导率测量是在非晶态氢化硅的等离子增强化学气相沉积过程中通过非接触式方法在原位进行的，该方法采用了激光脉冲照射后微波反射的变化。通过使用在层生长期间微波反射的瞬变幅度的干涉图案，可以确定非晶态的实际厚度。在晶体硅衬底的情况下，直接测量由非晶层的生长改性的衬底中的光吸收的变化。示出了优化晶体硅衬底上的抗反射层的示例。在实验数据与多层结构上的光反射和透射的计算之间找到了很好的一致性。 [参考：13]

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《Applied optics》 |1995年第4期|共5页
作者
Neitzert HC.; Kunst M.; Nell MEA.; Hirsch W.;
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Antireflective coatings; Thin-film deposition; In situ measurements; Amorphous silicon; Transient photoconductivity measurements; H films; Growth;

机译：减反射膜;薄膜沉积;原位测量;非晶硅;瞬态光电导率测量;H膜;生长;

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1. IN SITU THICKNESS CONTROL DURING PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS SILICON FILMS BY TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS [J] . Neitzert HC., Kunst M., Nell MEA., Applied optics . 1995,第4期

机译：用时间分辨微波电导率法测量氢化非晶硅膜的等离子体沉积原位厚度
2. Effects of deposition gas pressure on the properties of hydrogenated amorphous carbon nitride films grown by surface wave microwave plasma chemical vapor deposition [J] . M. Rusop, A.M.M. Omer, S. Adhikari Diamond and Related Materials . 2005,第3a7期

机译：沉积气压对表面波微波等离子体化学气相沉积法生长的氢化非晶氮化碳膜性能的影响
3. Deposition of Pure Hydrogenated Amorphous Silicon by Plasma-Enhanced Chemical Vapor Deposition for Polycrystalline Silicon Thin Film Transistors [J] . Masato Hiramatsu, Yoshinobu Kimura, Masayuki Jyumonji, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第6A期

机译：多晶硅薄膜晶体管的等离子增强化学气相沉积法沉积纯氢化非晶硅
4. Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements [C] . Heinz-Christoph Neitzert, Marinus Kunst International Conference on the Physics of Semiconductors . 2009

机译：通过原位瞬态微波光电电导光测量监测的低导电性基材上的薄氢化非晶硅层的初始生长
5. Investigation of the film properties and deposition process of hydrogenated amorphous carbon films deposited with a microwave ECR plasma reactor. [D] . Kim, Bo Keun. 2000

机译：用微波ECR等离子体反应器沉积氢化非晶碳膜的膜性能和沉积过程的研究。
6. Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements [O] . Pascal Sánchez, Olaya Lorenzo, Armando Menéndez, 2011

机译：通过辉光放电光谱研究掺杂元素来表征非晶硅薄膜。电导率和带隙能量测量的相关性
7. Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements [O] . Heinrich Christoph NEITZERT, Marinus KUNST 2009

机译：通过原位瞬态微波光电导率测量监测低电导率基板上的薄氢化非晶硅层的初始生长
8. Preparation and Characterization of Hydrogenated Amorphous-Silicon Films Produced by Ion Plating and Hydrogenated Amorphous-Boron Films Produced by Glow-Discharge Decomposition. Final Report, April 1, 1980-May 31, 1981 [R] . Cocks F.H, Jones, P. L. 1981

机译：添加到阅览室阅读软件下载与<<辉光放电分解制备离子镀和氢化非晶硼薄膜制备氢化非晶硅薄膜及其表征>>相似的文献。最终报告，1980年4月1日至1981年5月31日

IN SITU THICKNESS CONTROL DURING PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS SILICON FILMS BY TIME-RESOLVED MICROWAVE CONDUCTIVITY MEASUREMENTS

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