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Low-noise solar-blind photodetectors based on LaAlO_(3) single crystal with transparent indium-tin-oxide electrode as detection window

机译:基于LaAlO_(3)单晶的低噪声日盲光电探测器,透明氧化铟锡电极作为检测窗口

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摘要

The low-noise solar-blind photodetectors of indium-tin-oxide/LaAlO_(3)/Ag (ITO/LAO/Ag) have been fabricated based on the properties of LAO bandgap excitation and the transparent conductance of ITO thin film. The ITO thin films are epitaxially grown on LAO wafers as the electrodes and detection windows of the photodetectors. The photodetectors have low noise and excellent electromagnetic shielding. The influence of the thickness of ITO thin films on the responsivity of the photodetectors has been studied. The photocurrent responsivity can reach 10.3 mA/W under the irradiation of 200-220 nm for a photodetector with 5 nm thick ITO film. The noise current is 1 pA order magnitude under the sunlight at midday. The experiment results suggest that ITO/LAO/Ag is one of the promising structures for the solar-blind deep-ultraviolet photodetectors.
机译:基于LAO带隙激发的性质和ITO薄膜的透明电导率,制备了铟锡氧化物/ LaAlO_(3)/ Ag(ITO / LAO / Ag)低噪声太阳盲光电探测器。 ITO薄膜外延生长在LAO晶片上,作为光电探测器的电极和探测窗口。光电探测器具有低噪声和出色的电磁屏蔽性能。研究了ITO薄膜厚度对光电探测器响应度的影响。对于具有5 nm厚ITO膜的光电探测器,在200-220 nm的辐射下,光电流响应率可以达到10.3 mA / W。在正午的阳光下,噪声电流为1 pA量级。实验结果表明,ITO / LAO / Ag是用于太阳盲深紫外光电探测器的有前途的结构之一。

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