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Low-noise visible-blind photodetectors based on SrTiO_(3) single crystal with transparent indium tin oxide electrode as window

机译:基于SrTiO_(3)单晶的透明铟锡氧化物电极为窗口的低噪声可见盲光电探测器

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摘要

We fabricate low-noise visible-blind ultraviolet photodetectors of indium tin oxide/SrTiO_(3)/Ag (ITO/STO/Ag) based on the properties of STO bandgap excitation and the conductance of ITO thin film. The ITO films are epitaxially grown on STO wafers as electrodes and windows of the photodetectors, simultaneously. The photodetectors have low noise and very good electromagnetic shielding. The dark current is as low as 270 pA even at a 200 V bias. The peak responsivity reaches to 30 mA/W at the wavelength of 360 nm. From the experimental results, the same ideas can be generalized to develop visible-blind and solar-blind UV photodetectors based on wide bandgap materials, such as LaAlO_(3), LiNbO_(3), LiTaO_(3), BaTiO_(3), ZnO, MgO, and ZrO_(2).
机译:我们基于STO带隙激发的性质和ITO薄膜的电导率,制造了铟锡氧化物/ SrTiO_(3)/ Ag(ITO / STO / Ag)的低噪声可见光紫外探测器。 ITO膜同时在STO晶片上外延生长,作为光电探测器的电极和窗口。光电探测器具有低噪声和非常好的电磁屏蔽性能。即使在200 V偏置下,暗电流也可低至270 pA。在360 nm波长处,峰值响应度达到30 mA / W。从实验结果可以得出相同的想法,以开发基于宽带隙材料(如LaAlO_(3),LiNbO_(3),LiTaO_(3),BaTiO_(3), ZnO,MgO和ZrO_(2)。

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