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Effect of different epitaxial structures on GaAs photoemission

机译：不同外延结构对GaAs光发射的影响

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摘要

The quantum efficiency equations of two different structure reflection-mode GaAs photocathodes with back interface recombination velocity have been solved from the diffusion equations. One structure consists of GaAs substrate and an epitaxial GaAs active layer (GaAs-GaAs) and another structure consists of GaAs substrate, an epitaxial AlGaAs buffer layer, and a GaAs active layer (AlGaAs-GaAs). The experimental results show that the quantum efficiency of long-wavelength photons and the integral sensitivities for GaAs-GaAs cathodes both increase with the increase in the active layer thickness, which is due to the increase of electron diffusion length. The quantum efficiency of long-wavelength photons and the integral sensitivity of AlGaAs-GaAs cathodes are greater than those of GaAs-GaAs cathodes with an identical active layer thickness, which is attributed to the AlGaAs buffer layer. The buffer layer can reflect electrons and improve the quality of the GaAs active layer. Through the theoretical simulation, we found the active layer thickness for AlGaAs-GaAs cathodes has an optimum value at which the cathodes achieve the maximum sensitivity.
机译：由扩散方程求解了两种具有背界面复合速度的结构不同的反射型GaAs光电阴极的量子效率方程。一种结构由GaAs衬底和外延GaAs活性层（GaAs-GaAs）组成，另一种结构由GaAs衬底，外延AlGaAs缓冲层和GaAs活性层（AlGaAs-GaAs）组成。实验结果表明，长波长光子的量子效率和GaAs-GaAs阴极的整体灵敏度都随活性层厚度的增加而增加，这是由于电子扩散长度的增加所致。长波长光子的量子效率和AlGaAs-GaAs阴极的整体灵敏度要高于具有相同活性层厚度的GaAs-GaAs阴极的量子效率，这归因于AlGaAs缓冲层。缓冲层可以反射电子并改善GaAs有源层的质量。通过理论模拟，我们发现AlGaAs-GaAs阴极的活性层厚度具有最佳值，在该值下，阴极可获得最大灵敏度。

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