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Analysis of long-term internal stress and film structure of SiO_(2) optical thin films

机译：SiO_（2）光学薄膜的长期内应力和膜结构分析

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摘要

Recently, the demand for durability of optical thin films, which have long been used, has been growing as the performance of optical components improves. The stress of a film is an important parameter that is related to its adhesion. The electron beam (EB) and ion-assisted deposition (IAD) methods are widely used to fabricate optical thin films. However, there are few reports on long-term internal stress, despite the importance of this issue. Here we discuss the time dependence of the stress of SiO_(2) optical thin films in terms of optical characteristics in the infrared region. It was found that SiO_(2) thin films prepared by the EB and IAD methods exhibited compression stress. The Si-OH molecular bond was observed at around 930cm~(-1) in the Fourier transform infrared spectroscopy spectrum of the sample prepared by the EB method, which exhibited a large change in internal stress after an elapsed time. It is considered that this change in bonding was related to the decrease in the stress of the films.
机译：近来，随着光学部件性能的提高，对长期使用的光学薄膜的耐久性的需求已经增长。膜的应力是与其附着力有关的重要参数。电子束（EB）和离子辅助沉积（IAD）方法被广泛用于制造光学薄膜。但是，尽管这个问题很重要，但有关长期内部压力的报道很少。在这里，我们讨论了SiO_（2）光学薄膜的应力随时间的变化，这取决于红外区域的光学特性。发现用EB和IAD方法制备的SiO_（2）薄膜表现出压缩应力。在EB法制备的样品的傅里叶变换红外光谱中，在约930cm〜（-1）处观察到Si-OH分子键，经过一段时间后内应力变化较大。可以认为，这种结合变化与膜应力的降低有关。

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