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Effects of graded band-gap structures on spectral response of AlGaAs/GaAs photocathodes

机译：梯度带隙结构对AlGaAs / GaAs光电阴极光谱响应的影响

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摘要

The effects of AlGaAs/GaAs layer thickness and Al composition range on the spectral response and integral sensitivities of reflection-mode graded band-gap AlGaAs/GaAs photocathodes have been investigated and simulated. The experimental results demonstrate that the spectral response over the wavelength region of interest for graded band-gap photocathodes is greater than that for uniform band-gap cathodes, and the increase in long-wavelength response is more pronounced. These results can be attributed to the built-in electric field in the graded band-gap AlGaAs layer. We established a spectral response model of graded band-gap photocathodes based on the numerical solution of coupled Poisson and continuity equations. According to the model, we calculated the theoretical spectral response and sensitivities of graded band-gap cathodes, and found the optimum AlxGa1-xAs layer thicknesses are 6, 10, 16, and 22 mu m for the reflection-mode cathodes with linearly graded Al composition x ranges of 0 to 0.1, 0.2, 0.3, and 0.4, respectively. (C) 2015 Optical Society of America
机译：研究并模拟了AlGaAs / GaAs层厚度和Al组成范围对反射型梯度带隙AlGaAs / GaAs光电阴极的光谱响应和积分灵敏度的影响。实验结果表明，梯度带隙光电阴极在感兴趣的波长区域上的光谱响应大于均匀带隙阴极的光谱响应，并且长波长响应的增加更加明显。这些结果可归因于梯度带隙AlGaAs层中的内置电场。我们基于泊松耦合和连续性方程的数值解建立了带隙光电阴极的光谱响应模型。根据该模型，我们计算了梯度带隙阴极的理论光谱响应和灵敏度，并发现线性梯度梯度Al的反射模式阴极的最佳AlxGa1-xAs层厚度为6、10、16和22μm组成x的范围分别为0到0.1、0.2、0.3和0.4。 （C）2015年美国眼镜学会

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