Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

Ai Y.; Huang R.; Hao Z.; Wang R.; Liu C.; Fan C.; Wang Y.

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Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

机译：基于泊松衍射的垂直硅纳米环的自顶向下制造

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Vertical Si nano-rings with a uniform thickness of about 100nm have been fabricated by conventional optical photolithography with a low cost based on Poisson diffraction. Moreover, the roughness of the Si nano-rings can be effectively reduced by sacrificial oxidation. In order to increase the density of the nano-rings, coaxial twin Si nano-rings have been fabricated by the Poisson diffraction method combined with the spacer technique. The thickness of both the inner and outer Si nano-rings is about 60nm, and the gap between the twin nano-rings is about 100nm

机译：基于泊松衍射的低成本的常规光学光刻技术已经制造了具有约100nm的均匀厚度的垂直Si纳米环。此外，可以通过牺牲氧化有效地减小Si纳米环的粗糙度。为了增加纳米环的密度，已经通过泊松衍射法结合间隔物技术制造了同轴双硅纳米环。内和外Si纳米环的厚度均为约60nm，双纳米环之间的间隙为约100nm

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《Nanotechnology》 |2011年第30期|共6页
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Ai Y.; Huang R.; Hao Z.; Wang R.; Liu C.; Fan C.; Wang Y.;
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1. Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction [J] . Ai Y., Huang R., Hao Z., Nanotechnology . 2011,第30期

机译：基于泊松衍射的垂直硅纳米环的自顶向下制造
2. Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget [J] . Michael Zervas, Davide Sacchetto, Giovanni De Micheli, Microelectronic Engineering . 2011,第10期

机译：自上而下的超低密度垂直堆叠硅纳米线阵列的制造
3. The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs [J] . Elizabeth Buitrago, Montserrat Fernandez-Bolanos, Sara Rigante, Sensors and Actuators . 2014,第mara31a期

机译：基于垂直堆叠的SiNW和FinFET的3D集成，完全兼容CMOS的FET生物传感器的自顶向下制造
4. Top-Down Approach: Fabrication of Silicon Nanowires using Scanning Electron Microscope based Electron Beam Lithography Method and Inductively Coupled Plasma-Reactive Ion Etching [C] . M.N.M. Nor, U. Hashim, N.H.A. Halim, International Conference on Advancement of Materials and Nanotechnology . 2010

机译：自上而下的方法：使用扫描电子显微镜基电子束光刻方法和电感耦合等离子体反应离子蚀刻制造硅纳米线
5. Silicon-germanium/silicon vertical MOSFETs and sidewall strained silicon devices: Design and fabrication. [D] . Liu, Kou-Chen. 1999

机译：硅锗/硅垂直MOSFET和侧壁应变硅器件：设计和制造。
6. Cryogenic Etching of Silicon: An Alternative Method For Fabrication of Vertical Microcantilever Master Molds [O] . Kweku A. Addae-Mensah, Scott Retterer, Susan R. Opalenik, -1

机译：硅的低温腐蚀：垂直微悬臂梁母模的另一种方法进行制造
7. A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array [O] . Kangil Kim, Jae Keun Lee, Seung Ju Han, 2020

机译：用于垂直堆叠硅纳米线阵列的新型自上而下的制造工艺

Top-down fabrication of vertical silicon nano-rings based on Poisson diffraction

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