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The Hanle effect and electron spin polarization in InAs/GaAs quantum dots up to room temperature

机译：InAs / GaAs量子点中直至室温的Hanle效应和电子自旋极化

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摘要

The Hanle effect in InAs/GaAs quantum dots (QDs) is studied under optical orientation as a function of temperature over the range of 150300K, with the aim of understanding the physical mechanism responsible for the observed sharp increase of electron spin polarization with increasing temperature. The deduced spin lifetime T _s of positive trions in the QDs is found to be independent of temperature, and is also insensitive to excitation energy and density. It is argued that the measured T _s is mainly determined by the longitudinal spin-flip time (T _1) and the spin dephasing time of the studied QD ensemble, of which both are temperature independent over the studied temperature range and the latter makes a larger contribution. The observed sharply rising QD spin polarization degree with increasing temperature, on the other hand, is shown to be induced by an increase in spin injection efficiency from the barrier/wetting layer and also by a moderate increase in spin detection efficiency of the QD.
机译：研究InAs / GaAs量子点（QDs）中的Hanle效应在150300K范围内随温度的变化与温度的关系，目的是了解导致电子自旋极化随温度升高而急剧增加的物理机制。发现推导的量子点中正三极子的自旋寿命T _s与温度无关，并且对激发能和密度不敏感。认为所测得的T _s主要由所研究的QD系综的纵向自旋翻转时间（T _1）和自相移时间决定，两者在所研究的温度范围内均与温度无关，后者使温度更大贡献。另一方面，观察到的QD自旋极化度随着温度的升高而急剧上升，这是由于来自势垒/润湿层的自旋注入效率的提高以及QD自旋检测效率的适度提高引起的。

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