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Beyond von Neumann - Logic operations in passive crossbar arrays alongside memory operations

机译：超越冯·诺依曼-无源交叉开关阵列中的逻辑运算与内存运算

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摘要

The realization of logic operations within passive crossbar memory arrays is a promising approach to expand the fields of application of such architectures. Material implication was recently suggested as the basic function of memristive crossbar junctions, and single bipolar resistive switches (BRS) as well as complementary resistive switches (CRS) were shown to be capable of realizing this logical functionality. Based on a systematic analysis of the Boolean functions, we demonstrate here that 14 of 16 Boolean functions can be realized with a single BRS or CRS cell in at most three sequential cycles. Since the read-out step is independent of the logic operation steps, the result of the logic operation is directly stored to memory, making logic-in-memory applications feasible.
机译：无源交叉开关存储阵列中逻辑操作的实现是扩展此类架构的应用领域的有前途的方法。最近，人们暗示了材料的含义是忆阻纵横开关的基本功能，并且单双极电阻开关（BRS）以及互补电阻开关（CRS）被证明能够实现这种逻辑功能。基于对布尔函数的系统分析，我们在此证明，单个BRS或CRS单元最多可以在三个连续周期中实现16个布尔函数中的14个。由于读出步骤与逻辑操作步骤无关，因此逻辑操作的结果直接存储到存储器中，从而使内存中逻辑应用程序可行。

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