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In-plane organization of silicon nanocrystals embedded in SiO_2 thin films

机译:SiO_2薄膜中嵌入的硅纳米晶体的面内组织

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Nanofabrication of buried structures with dimensions below 5 nm and with controlled 3D-positioning at the nanoscale was attempted to open new routes to future nanodevices where single nanostructures could be systematically interfaced. A typical example is ultralow-energy ion beam synthesis where already the depth positioning of embedded arrays of silicon nanocrystals can be finely controlled with nanometric precision. In this study, we investigated for the first time the control of the in-plane organization of the nanocrystals using a legitimate patterning option for microelectronic industries, self-assembled block-copolymer. The compatibility with the ultralow-energy ion beam synthesis process of polymeric nanoporous films used as mask was demonstrated together with the capability to control in 3D the organization of Si nanocrystals. The resulting nano-organization consists in a hexagonal array of 20 nm wide nanovolumes containing on average 8 nanocrystals embedded at a controlled depth within a silica matrix.
机译:试图对尺寸小于5 nm的纳米结构以及在纳米级进行受控3D定位的纳米结构进行纳米加工,以开辟通往未来纳米器件的新途径,在纳米器件中可以系统地连接单个纳米结构。一个典型的例子是超低能离子束合成,其中已经可以纳米精度精确地控制硅纳米晶体的嵌入式阵列的深度定位。在这项研究中,我们首次研究了使用微电子工业的合法构图选项,自组装嵌段共聚物控制纳米晶体的面内组织。证明了与用作掩膜的聚合物纳米多孔膜的超低能离子束合成工艺的兼容性以及在3D模式下控制Si纳米晶体组织的能力。所得的纳米组织由20 nm宽的纳米体积的六边形阵列组成,平均包含8个纳米晶,这些纳米晶以受控的深度嵌入二氧化硅基质中。

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